Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

System and method for efficient address translation of flash memory device

a flash memory and address translation technology, applied in the direction of memory adressing/allocation/relocation, instruments, computing, etc., can solve the problems of deteriorating reliability, limited use times, and erase times, etc., to improve the performance, stability and life-span of the flash memory system, and efficient address translation. , to extend the life-span of the flash memory devi

Active Publication Date: 2017-06-15
ELECTRONICS & TELECOMM RES INST
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention offers a way to efficiently manage flash memory, overcome its life-span limitations, and integrate different types of devices seamlessly.

Problems solved by technology

However, the flash memory has a problem that as a usage time elapses, reliability deteriorates.
The problem is caused by limitation of the number of use times (more particularly, the number of erase times) of the flash memory.
However, a difference in address translation method causes a difference in performance, stability, life-span, and the like of the flash memory device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System and method for efficient address translation of flash memory device
  • System and method for efficient address translation of flash memory device
  • System and method for efficient address translation of flash memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033]Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0034]FIG. 1 is a configuration diagram of an address translation system for a flash memory device according to an exemplary embodiment of the present invention.

[0035]A computing system 100 includes a storage client 110, a logical address space 120, a flash memory system 130, and a memory 140.

[0036]Herein, the storage client 110 includes an operating system 111, a file system 112, a database 113, and a logical volume manager 114. In addition, the flash memory system 130 includes a flash memory manager 131, an address translation module 132, a physical address space 133, and a flash memory device 150.

[0037]The flash memory device 150 includes an internal memory 151, a flash memory media control unit 152, and a flash memory media 160. In the flash memory system 130, a region including the flash memory manager 131, the address translation module 132,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed are a system and a method for address translation for a flash memory device, and particularly, disclosed is a technology that is capable of efficiently performing address translation between a logical address provided to the outside of a flash memory and a physical address of an actual flash memory in managing the flash memory device. The system includes: a flash memory system writing a corresponding data page by allocating a physical address space when there is a request for writing a data page from storage clients, and performing address translation between a physical address and a logical address; and a logical address space formed between the flash memory system and the storage client to provide the logical address.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority to and the benefit of Korean Patent Application No. 10-2014-0002821 filed in the Korean Intellectual Property Office on Jan. 9, 2014, the entire contents of which are incorporated herein by reference.TECHNICAL FIELD[0002]The present invention relates to a system and a method for performing address translation for a flash memory device, and more particularly, to a technology that is capable of efficiently performing address translation between a logical address provided to the outside of a flash memory and a physical address of an actual flash memory in managing the flash memory device.BACKGROUND ART[0003]In general, a flash memory is operable with lower power than an existing hard disk and is excellent in terms of stability due to no mechanical part. Further, since the flash memory has a memory characteristic and a nonvolatile characteristic differently from a DRAM, using the flash memory as a next-generat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G06F12/02G06F12/10
CPCG06F12/0246G06F2212/7201G06F12/10A47J37/1247A47J37/1271A47J37/1276A47J37/129F28D21/00F28D2021/0042F28F27/00
Inventor KIM, CHANG SOOLEE, HUN SOONPARK, KYOUNG HYUNTHANH, MAI HAILEE, MI YOUNGHUR, SUNG JIN
Owner ELECTRONICS & TELECOMM RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com