Resistive memory apparatus and setting method for resistive memory cell thereof

Abstract

A resistive memory apparatus and a setting method for a resistive memory cell thereof are provided. The setting method includes: performing a first setting operation on the resistive memory cell, and performing a first verifying operation on the resistive memory cell after the first setting operation is finished; determining whether to perform a first resetting operation on the resistive memory cell according to a verifying result of the first verifying operation, and performing a second verifying operation on the resistive memory cell after the first resetting operation is determined to be performed and is finished; and determining whether to perform a second resetting operation on the resistive memory cell according to a verifying result of the second verifying operation, and performing a third verifying operation on the resistive memory cell after the second resetting operation is determined to be performed and is finished.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims the priority benefit of China application serial no. 201710532576.6, filed on Jul. 3, 2017. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The invention relates to a resistive memory apparatus and a setting method for a resistive memory cell thereof, and more particularly, to a resistive memory apparatus and a setting method for a resistive memory cell thereof which are capable of preventing high temperature data retention loss.2. Description of Related Art[0003]In resistive memories, to recover an oxygen vacancy region of a resistive memory cell generated in a setting operation and improve its switching stability, a setting mechanism which utilizes a resetting operation performed unconditionally after setting has been proposed in the conventional art. However, this kind ...

AI Technical Summary

Benefits of technology

[0006]The invention is directed to various resistive memory apparatuses and their setting methods for resistive memory cell, which are capable of effectively solving the problem of high temperature data retention loss.

[0010]Based on the above, according to the setting methods for the resistive memory cell, the verifying operation is performed after the setting operation is performed on the resistive memory cell, and whether the subsequent resetting operations is to be performed is determined according to the verifying result of the verifying operation. Accordingly, when performing the setting method for the resistive memory cells with different characteristics, the invention can conduct an adaptive adjustment on setting actions with respect to the characteristic of the selected resistive memory cell. As a result, the probability of high temperature data retention loss occurred on the resistive memory cells may be effectively reduced to maintain the yield of the resistive memory apparatus.

Problems solved by technology

However, this kind of conventional setting mechanism performs the setting and resetting operations unconditionally on all the resistive memory cells been through the setting operation.

In FIG. 1B, if the resetting operation is too weak, the oxygen ions OX may be pushed away from the oxygen vacancy region 120, and thus the oxygen vacancy region 120 may be weaken through the recombination action between the oxygen vacancy region 120 and the oxygen ions OX, which also leads to the problem of high temperature data retention loss.

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