Method of forming a semiconductor device
a semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of affecting the underlying tantalum nitride barrier layer, generating titanium nitride residues, and affecting the nmos region of titanium nitride etching,
Active Publication Date: 2022-11-17
UNITED MICROELECTRONICS CORP
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Benefits of technology
[0005]It is one object of the present invention to provide an improved method of forming a semiconductor device in order to solve the above-mentioned shortcomings or deficiencies of the prior art.
Problems solved by technology
However, the disadvantage of the above method is that when the titanium nitride layer in the NMOS region is removed by etching, titanium nitride residues may be generated.
In addition, removing the titanium nitride layer in the NMOS region by etching is likely to damage the underlying tantalum nitride barrier layer.
Method used
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[0018]Advantages and features of embodiments may be understood more readily by reference to the following detailed description of preferred embodiments and the accompanying drawings. Embodiments may, however, be embodied in many different forms and should not be construed as being limited to those set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey exemplary implementations of embodiments to those skilled in the art, so embodiments will only be defined by the appended claims. Like reference numerals refer to like elements throughout the specification.
[0019]The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and / or “comprising...
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Abstract
A method of forming a semiconductor device is disclosed. A substrate having a first device region and a second device region is provided. A metal nitride barrier layer is formed to cover the first device region and the second device region. A titanium layer is deposited on the metal nitride barrier layer. The titanium layer is selectively removed from the second device region, thereby exposing the metal nitride barrier layer in the second device region. The titanium layer in the first device region is transformed into a titanium nitride layer. The titanium nitride layer is a work function layer on the first device region.
Description
BACKGROUND OF THE INVENTION1. Field of the Invention[0001]The present invention relates generally to the field of semiconductor technology. More particularly, the present invention relates to a method for forming a semiconductor device.2. Description of the Prior Art[0002]Advanced complementary metal oxide semiconductor (CMOS) devices may increasingly be utilizing metal gate materials to avoid “poly-Si depletion” and “boron penetration” effects. The selection of a particular metal for a gate material can be guided by a number of considerations, for example, the work function and electrical resistivity desired, the type of gate dielectric, the thermal budget that the gate metal will be expected to survive, etc. In the “dual-metal / dual-work function” CMOS manufacturing method, different gate metals suitable for p-FET (high work function) and for n-FET (low work function) are used.[0003]In general, metal gates for CMOS devises can comprise one or more layers of a pure metal or alloy, a...
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IPC IPC(8): H01L21/28H01L29/49H01L21/3213
CPCH01L21/28088H01L29/4966H01L21/32134H01L27/092H01L29/0603H01L29/0684H01L21/8238H01L21/823842H01L29/517
Inventor LAI, KUAN-YINGHSIEH, HSIN-YUWANG, CHANG-MAOCHIU, CHUNG-YI
Owner UNITED MICROELECTRONICS CORP