Semiconductor processing system

Abstract

A single wafer processing type of a semiconductor processing system is provided so as to achieve that residual particles inside a reactor thereof are efficiently removed and a gas injected into the reactor is uniformly flowed over a wafer in a wide range of the gas flow rate. The semiconductor processing system includes gas flow adjusting means (28, 29, 30) having a slit (30) communicated with an exhaust port (35) for pumping out a gas injected into a reactor (10) from the reactor (10). The slit (30) is provided annularly around a circumference of a wafer (34) and positioned below a position of the wafer (34), and a width of the slit (30) is narrowed about the exhaust port (35).

Description

The present invention relates to a single wafer processing type of a semiconductor processing system for depositing or growing a semiconductor film, an insulating film, a metallic film or the like on a wafer and, in particular, relates to a single wafer processing type of a semiconductor processing system in which a process gas flows uniformly over a wafer.BACKGROUND OF THE ARTRecently, a size of a wafer has become larger in diameter and, simultaneously, a single wafer processing type has become a main stream of a semiconductor processing system in the place of a batch processing type.A single wafer processing type of a semiconductor processing system in an earlier technology comprises gas injecting means for injecting a process gas to be contributed to a reaction into a reactor, susceptor means for supporting a wafer in the reactor, energy supplying means for exciting and reacting the process gas injected in the reactor, and gas pumping means for pumping out the process gas from th...

AI Technical Summary

Problems solved by technology

Heisei 6(1994)-13368, the exhaust holes are annularly arranged on the gas flow adjusting plate at spaces between them, and due to such an arrangement, even though the activated fluoric gas comes into the annular channel, the activated fluoric gas can not be carried well through the whole space inside the channel and as a result, a reaction product attached inside the channel can not be removed completely.

However, when a carrier gas is additionally introduced, the concentration of a process gas and the deposition rate are reduced, and as a result, the capacity of processing a wafer in the system is reduced.