Semiconductor processing system

a processing system and semiconductor technology, applied in the direction of coatings, metallic material coating processes, chemical vapor deposition coatings, etc., can solve the problems of reduced process gas concentration and deposition rate, inability to completely remove reaction products attached inside the channel, and inability to carry active fluoric gas through the whole space inside the channel

Inactive Publication Date: 2000-09-19
ASM JAPAN
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  • Abstract
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AI Technical Summary

Problems solved by technology

Heisei 6(1994)-13368, the exhaust holes are annularly arranged on the gas flow adjusting plate at spaces between them, and due to such an arrangement, even though the activated fluoric gas comes into the annular channel, the activated fluoric gas can not be carried well through the whole space inside t...

Method used

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Examples

Experimental program
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Embodiment Construction

Silicon oxide film is deposited on a silicon wafer (200 mm) by use of a single wafer processing type of a semiconductor processing system of the present invention shown in FIG. 1.

The number of holes provided in the shower plate for supplying a process gas onto the wafer is 5000 holes and each hole has 0.5 mm in diameter.

Tetraethoxysilane (Si(OC.sub.2 H.sub.5).sub.4) (TEOS) and oxygen are injected into the reactor as the process gas. The flow rate of TEOS is 80 sccm, and that of oxygen is 800 sccm.

Pressure in the reactor is set at 3 Torr, and the wafer temperature is set at 360.degree. C. 13.56 MHz, 285 W and 430 KHz, 315 W of RF output are applied to the shower plate.

A distance between the susceptor (as a ground electrode for supporting the wafer and the shower plate (as a RF electrode) is 10 mm.

The top plate and the side plate of the gas flow adjusting means are made of aluminum alloy (A 5052). Three slits are provided in the top plate positioned at about 182 mm from thr center of ...

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Abstract

A single wafer processing type of a semiconductor processing system is provided so as to achieve that residual particles inside a reactor thereof are efficiently removed and a gas injected into the reactor is uniformly flowed over a wafer in a wide range of the gas flow rate. The semiconductor processing system includes gas flow adjusting means (28, 29, 30) having a slit (30) communicated with an exhaust port (35) for pumping out a gas injected into a reactor (10) from the reactor (10). The slit (30) is provided annularly around a circumference of a wafer (34) and positioned below a position of the wafer (34), and a width of the slit (30) is narrowed about the exhaust port (35).

Description

The present invention relates to a single wafer processing type of a semiconductor processing system for depositing or growing a semiconductor film, an insulating film, a metallic film or the like on a wafer and, in particular, relates to a single wafer processing type of a semiconductor processing system in which a process gas flows uniformly over a wafer.BACKGROUND OF THE ARTRecently, a size of a wafer has become larger in diameter and, simultaneously, a single wafer processing type has become a main stream of a semiconductor processing system in the place of a batch processing type.A single wafer processing type of a semiconductor processing system in an earlier technology comprises gas injecting means for injecting a process gas to be contributed to a reaction into a reactor, susceptor means for supporting a wafer in the reactor, energy supplying means for exciting and reacting the process gas injected in the reactor, and gas pumping means for pumping out the process gas from th...

Claims

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Application Information

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IPC IPC(8): C23C16/44
CPCC23C16/4401C23C16/4412
Inventor SATO, KIYOSHI
Owner ASM JAPAN
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