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Flash memory device having reduced program time and related programming method

a flash memory device and program time technology, applied in static storage, digital storage, instruments, etc., can solve the problems of difficult to reduce data transfer time and high voltage enable time, and achieve the effect of reducing the total program tim

Active Publication Date: 2009-02-03
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009]Embodiments of the invention provide a flash memory device and a related program method enabling a reduced total program time.

Problems solved by technology

Practically speaking, it is difficult to reduce the data transfer time and the high voltage enable time that occupy most of the total program time.

Method used

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  • Flash memory device having reduced program time and related programming method
  • Flash memory device having reduced program time and related programming method
  • Flash memory device having reduced program time and related programming method

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Embodiment Construction

[0016]FIG. 2 is a block diagram showing a memory system with a flash memory device according to one embodiment of the invention. Referring to FIG. 2, flash memory device 1000 is adapted to store data transferred from a host 2000, and transfer data requested by the host 2000. The flash memory device 1000 comprises a host interface 1100, a flash interface 1200, a buffer memory 1300, and a flash memory core 1400.

[0017]The host interface 1100 provides an interface with the host 2000. The flash interface 1200 is adapted to control read and write operations for the flash memory core under the command of the host interface 1100. During a program operation, the buffer memory 1300 temporarily stores data to be programmed in the flash memory core 1400. Data stored in the buffer memory 1300 is transferred to the flash memory core 1400 under the control of the flash interface 1200. During a read operation, the buffer memory 1300 temporarily stores data to be read from the flash memory core 1400...

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PUM

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Abstract

Disclosed is a program method for a flash memory device which includes; storing data in a buffer memory and generating a high voltage as a word line voltage. When transmission of data to the buffer memory is complete, the program method simultaneously transfers data in the buffer memory to a page buffer circuit, and programs data in the page buffer circuit in a memory cell array according to the word line voltage.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]Embodiments of the invention relates to semiconductor memory devices. In particular, embodiments of the invention relate to flash memory devices and a method of programming flash memory devices.[0003]2. Discussion of Related Art[0004]The development of an ever-widening range of mobile electronic devices and related applications has generated an increasing demand for flash memories and systems adapted to the control and programming of flash memories. Flash memories are particularly well suited to mobile device applications because they are capable of storing a large amount of data in a non-volatile manner. Flash memory is, however, not without its own shortcomings—most notably longer read and write cycles, as compared with random access memories.[0005]However, this particular drawback can be overcome to a certain extent by the use of buffer memories. For example, data from a host device may be first stored in a buffer me...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G11C7/10
CPCG11C16/10G11C16/0483G11C16/08G11C16/30G11C16/3436
Inventor PARK, DAE-SIKLEE, JIN-YUBJO, SEONG-KUE
Owner SAMSUNG ELECTRONICS CO LTD