Circuit and method for generating column path control signals in semiconductor device

Abstract

A circuit for generating column path control signals in a semiconductor device is provided. The circuit includes a strobe signal delay unit configured to receive a strobe signal, and delay the received strobe signal for different delay periods, to generate a plurality of respective delayed strobe signals, and a control signal generator configured to receive at least one of the delayed strobe signals, and perform a logical operation to the received signal, to generate a first column path control signal for controlling a column path of the semiconductor device.

Description

BACKGROUND[0001]The present disclosure relates to a circuit and method for generating column path control signals in a semiconductor device, wherein the column path control signals can be generated under the condition in which they have been influenced by the same process, voltage, and temperature (PVT) characteristic variation of CMOS transistors.[0002]In general, a semiconductor device, in particular, a DRAM, needs various column path control signals for execution of a read or write operation. For example, column path control signals required for execution of a read or write operation in a DRAM include local input / output line precharge signals (for example, liopcg and lio_pcgback in FIG. 1) for controlling an operation of precharging signals on local input / output lines, a local input / output line reset signal (for example, lio_rst in FIG. 1) for equalizing the levels of the local input / output lines in response to the local input / output line precharge signals (for example, liopcg an...

AI Technical Summary

Problems solved by technology

As a result, there is a problem in that an erroneous read or write operation is carried out.

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