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Method and apparatus for programming non-volatile data storage device

a data storage device and non-volatile technology, applied in the field of memory devices, can solve the problem of reducing the maximum recording speed of a single flash memory

Inactive Publication Date: 2009-09-15
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach improves the maximum recording speed of flash memory devices by approximately 20% by reducing setup-related wait times and enabling continuous programming operations, thus enhancing overall system performance.

Problems solved by technology

However, according to the related art, since a non-volatile data storage device like a flash memory uses a single page buffer, it requires a setup time between consecutive program operations.
The setup time interrupts the consecutive program operations and reduces the maximum recording speed of a single flash memory.

Method used

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  • Method and apparatus for programming non-volatile data storage device
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  • Method and apparatus for programming non-volatile data storage device

Examples

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Embodiment Construction

[0038]Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, a flash memory will be taken as an example of a non-volatile data storage device. Although the following exemplary embodiments of the present invention are based on a flash memory, they can be applied to all kinds of non-volatile data storage devices.

[0039]FIG. 4 is a block diagram of an apparatus for programming a flash memory according to an exemplary embodiment of the present invention.

[0040]Referring to FIG. 4, the apparatus for programming a flash memory includes an input / output control unit 410, a control commanding unit 420, a memory cell array 430, a first page buffer 440, a second page buffer 450, and a page buffer selection unit 460.

[0041]The input / output control unit 410 controls input / output of data to be written / read. Addresses and data of rows and columns of the memory cell array 430 (memory cells of a ...

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Abstract

A method and apparatus are provided for programming a non-volatile data storage device, in which a fast write operation can be performed using a plurality of page buffers included in the non-volatile data storage device when the write operation is performed in a way of using interleaving for each channel in a multi-channel system using a plurality of non-volatile data storage devices. The method includes programming data in a memory cell array included in the non-volatile data storage device using a page buffer selected from among a plurality of page buffers included in the non-volatile data storage device and performing a setup operation for loading data using another page buffer, which is different from the page buffer selected during the programming.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATION[0001]This application claims the benefit of Korean Patent Application No. 10-2006-0079527, filed on Aug. 22, 2006, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]Methods and apparatuses consistent with the present invention relate to a memory device, and more particularly, to programming a non-volatile data storage device, in which a fast write operation is enabled when a write operation is performed using interleaving for each channel in a multi-channel system using a plurality of non-volatile data storage devices.[0004]2. Description of the Related Art[0005]Multimedia devices including mobile devices store and provide large-size multimedia data such as MPEG-I Audio Layer 3 (MP3) audio and moving pictures. Since storage devices used in the multimedia devices provide a large storage space, a function of...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G11C11/34
CPCG11C16/102G11C2216/14G11C7/1096G11C16/14
Inventor JEONG, SEONG-HUNMIN, HOUNG-SOGLEE, DONG-WOOKANG, SHIN-WOOKPARK, HYANG-SUK
Owner SAMSUNG ELECTRONICS CO LTD
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