Semiconductor device comprising bipolar and unipolar transistors including a concave and convex portion
a technology of concave and convex portions and semiconductor devices, which is applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of reduced electric power loss, difficult to meet both other characteristics and high breakdown voltage, and difficult to realize, so as to improve economic efficiency and reduce electric power loss
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first embodiment
[0076](First Embodiment)
[0077]FIG. 1 is a plane view of a planar layout of a semiconductor device according to a first embodiment. FIG. 2 is a cross-sectional view taken along a cutting plane line A-A′ of FIG. 1. The semiconductor device depicted in FIGS. 1 and 2 is a switching device (hereinafter, combined switching device) 1 having, for example, a 10-kV class breakdown voltage made up of multiple elements formed on the same semiconductor substrate (SiC substrate) made of a material with a band gap wider than silicon, such as silicon carbide (SiC) four-layer periodic hexagonal crystals (4H—SiC).
[0078]As depicted in FIG. 1, in the planar layout of the combined switching device 1, a MOSFET area 2 is disposed in a center portion of the SiC substrate as a formation area of an insulated gate field effect transistor (MOSFET, unipolar transistor) made of wide-gap semiconductor. IGBT areas 3a and 3b are arranged as formation areas of an insulated gate bipolar transistor (IGBT, bipolar tran...
second embodiment
[0147](Second Embodiment)
[0148]FIG. 5 is a plane view of a planar layout of a semiconductor device according to a second embodiment. The semiconductor device depicted in FIG. 5 is a combined switching device 221 having, for example, a 15-kV class breakdown voltage made up of a plurality of elements formed on the same SiC substrate made of 4H—SiC.
[0149]As depicted in FIG. 5, in the planar layout of the combined switching device 221, a MOSFET area 222 is disposed in a center portion of the SiC substrate as a formation area of a MOSFET made of wide-gap semiconductor. An IGBT area 223 is arranged as a formation area of an IGBT made of wide-gap semiconductor in contact with the MOSFET area 222, surrounding the MOSFET area 222.
[0150]In an outer peripheral portion of the SiC substrate, a JTE 224 and an n-channel stopper 225 are disposed as a breakdown voltage structure 224a. A MOSFET area 222 and an IGBT area 223 are surrounded by the breakdown voltage structure 224a. For example, the JTE ...
third embodiment
[0162](Third Embodiment)
[0163]FIGS. 6 and 7 are cross-sectional views of relevant portions of semiconductor devices according to a third embodiment. Each of the semiconductor devices depicted in FIGS. 6 and 7 is an element formed on the same SiC substrate made of 4H—SiC and making up a combined switching device having a 10-kV class breakdown voltage, for example. The combined switching device according to the third embodiment is disposed with a static induction transistor (SIT) depicted in FIG. 7 and a bipolar-mode statistic induction transistor (BSIT) depicted in FIG. 6 instead of the MOSFET and the IGBT of the combined switching device according to the first embodiment.
[0164]In the planar layout of the combined switching device according to the third embodiment, a SIT area is located in the center portion of the SiC substrate as a formation area of a static induction transistor (SIT) that is a unipolar transistor made of wide-gap semiconductor. BSIT areas are arranged as formation...
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