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Method of manufacturing a silicon oxide film

a manufacturing method and technology of silicon oxide, applied in the direction of coatings, metallic material coating processes, chemical vapor deposition coatings, etc., can solve the problems of difficult depositing of insulating films having a uniform film thickness on the wafer, silicon oxide films are likely to deposit, and silicon oxide films sometimes do not have uniform film thicknesses

Active Publication Date: 2016-06-14
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009]Accordingly, embodiments of the present invention may provide a novel and useful method of manufacturing a silicon oxide film that can deposit a silicon oxide film having a uniform film thickness on a surface of a wafer.

Problems solved by technology

Because of this, even though the wafer boat is rotated during the film deposition, a silicon oxide film is likely to deposit on an end part and the silicon oxide film sometimes does not have a uniform film thickness between the end part and the central part.
In such cases, depositing the insulating film having a uniform film thickness on the wafer was sometimes difficult according to the conventional method.

Method used

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  • Method of manufacturing a silicon oxide film
  • Method of manufacturing a silicon oxide film
  • Method of manufacturing a silicon oxide film

Examples

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working example

[0079]Although a description is given below of working examples of the present invention, the present invention is not limited to the working examples.

working example 1

[0080]In a working example 1, the film deposition apparatus illustrated in FIGS. 1 through 6 was used, and a silicon oxide film was manufactured on a wafer W by using Tris(dimethylamino) silane (Si(N(CH3)2)3H) (hereinafter also expressed as “3DMAS”) as a first gas, hydrogen gas and oxygen gas as a second gas. The following is major film deposition conditions.[0081]Temperature of Wafer: 600 degrees C.[0082]Supply Speed of 3DMAS: 0.3 L / min[0083]Supply Speed of Hydrogen Gas: 0.75 L / min[0084]Supply Speed of Oxygen Gas: 3.0 L / min[0085]Flow Rate of Separation Gas (Flow Rate from Each of Separation Gas Nozzles 41 and 42): 8 slm[0086]Rotational Speed of Turntable: 120 rpm

[0087]The manufacture of the silicon oxide film was performed by the following procedure as described in the embodiments of the present invention.

[0088]To begin with, a wafer was loaded in the film deposition apparatus, and the vacuum chamber 1 was evacuated to the reachable maximum degree of vacuum after closing the not sh...

working example 2

[0096]In a working example 2, a silicon oxide film was deposited on a wafer W similarly to the working example 1 except that ozone gas was used by ozonizing oxygen gas from the oxygen gas supply source by an ozonizer instead of using oxygen gas. At this time, ozone gas was supplied by ozonizing oxygen gas having a flow rate of 3 slm into ozone gas having an ozone concentration of 300 g / Nm3 by the ozonizer.

[0097]Then, the film contraction percentage of the obtained silicon oxide film was measured similarly to the working example 1, and the film contraction percentage was acknowledged to be 5.5%.

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Abstract

A method of manufacturing a silicon oxide film by using a film deposition apparatus is provided. The apparatus includes a turntable including a substrate receiving part on its upper surface, a first gas supply part to supply a first gas to the turntable in a first process area, and a second gas supply part arranged in a second process area apart from the first process area to supply a second gas. In the method, a silicon-containing gas is supplied from the first gas supply part as the first gas. A hydrogen gas and an oxidation gas are supplied from the second gas supply part as the second gas. The first gas is caused to adsorb on the substrate in the first process area, and the second gas is caused to react with the first gas adsorbed on the substrate in the second process area while rotating the turntable.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This patent application is based upon and claims the benefit of priority of Japanese Patent Application No. 2013-191060 filed on Sep. 13, 2013, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a method of manufacturing a silicon oxide film.[0004]2. Description of the Related Art[0005]A silicon oxide film is widely used as an insulating film of semiconductor devices such as a semiconductor integrated circuit (IC), and conventionally, a method of depositing a silicon oxide film on a surface of a wafer (substrate) has been examined.[0006]For example, Japanese Laid-Open Patent Application Publication No. 2007-42884 discloses a method of depositing a silicon oxide film by using a vertically extending cylindrical reaction chamber, into which a wafer boat holding a plurality of semiconductor wafers is carried, and after being evacuat...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/02C23C16/458C23C16/455C23C16/40
CPCH01L21/02164H01L21/02271H01L21/02219C23C16/402C23C16/45523C23C16/4584
Inventor TAMURA, TATSUYAKUMAGAI, TAKESHI
Owner TOKYO ELECTRON LTD