Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption film

Abstract

An integrated circuit chip having an anti-moisture-absorption film at the edge thereof and a method of forming the anti-moisture-absorption film are provided. In the integrated circuit chip which has predetermined devices inside and whose uppermost layer is covered with a passivation film, a trench is formed by etching interlayer dielectric films to a predetermined depth along the perimeter of the integrated circuit chip to be adjacent to the edge of the integrated circuit chip and an anti-moisture-absorption film is formed to fill the trench or is formed on the sidewall of the trench to a predetermined thickness, in order to prevent moisture from seeping into the edge of the integrated circuit chip. Moisture is effectively prevented from seeping into the edge of the chip by forming the anti-moisture-absorption film at the edge of the chip using the conventional processes of manufacturing the integrated circuit chip without an additional process.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to an integrated circuit chip and a method of manufacturing the same, and more particularly, to a structure at the edge of an integrated circuit chip and a method of forming the same.[0003]2. Description of the Related Art[0004]A plurality of integrated circuit chips are generally simultaneously formed on one wafer. The completed chips are sawed one by one and are packaged. Referring to FIG. 1 which is a plan view showing part of the surface of a wafer on which a plurality of integrated circuit chips are formed, chips 10 are formed on the wafer at predetermined intervals using the same process. The chips 10 are separated from each other by scribe lines 20 which define spaces for sawing the chips 10.[0005]Referring to FIG. 2 which is an enlarged sectional view taken along the line 2—2 of FIG. 1, metal interconnections 40 and a contact 60 are formed in the chip 10. Interlayer dielectric films...

AI Technical Summary

Benefits of technology

The present invention provides an integrated circuit chip with a structure that prevents moisture from seeping into the edge of the chip. This is achieved by forming a trench at a predetermined depth along the perimeter of the chip adjacent to the edge of the chip and filling it with an anti-moisture-absorption film of a predetermined thickness. The anti-moisture-absorption film prevents moisture from seeping into the edge of the integrated circuit chip, which improves its reliability and performance. This solution can be easily integrated into existing manufacturing processes without adding any extra steps.

Problems solved by technology

However, the BPSG, the PSG, the SOG, and the TEOS, which include a high concentration of impurities such as boron greater than or equal to 5 weight % and phosphorous greater than or equal to 4 weight %, are vulnerable to moisture.

Accordingly, the reliability of the device severely deteriorates.

However, when using these methods, it is necessary to add process steps.

Also, such methods have not been provided with respect to the edges of the chips.

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