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Structure of catching diode (four)

A diode and reverse connection technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of large control circuit area, temperature characteristic deviation, etc.

Active Publication Date: 2007-09-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, a voltage stabilizing circuit is used to realize the problem. The problem of this method is that the area of ​​the control circuit is too large, especially for small-capacity memory.
In addition, general diodes have a large temperature characteristic shift problem, that is, their clamping voltage will shift with temperature

Method used

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  • Structure of catching diode (four)
  • Structure of catching diode (four)
  • Structure of catching diode (four)

Examples

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Embodiment Construction

[0009] As shown in FIG. 1, the embedded diode structure in the N well of the present invention is to make two reversely connected P-N-P diodes in the N well.

[0010] As shown in Figure 2, the embedded diode structure realized in the independent P well isolated by the N well and the buried N well of the present invention is to be made in the independent P well isolated by the N well and the buried N well. into two reverse connected N-P-N diodes.

[0011] It was found in experiments that the reverse breakdown voltage of ordinary diodes varies with temperature. Solving this problem becomes the key to using diodes to precisely control the boost value of the EEPEOM or Flash circuit voltage pump. The present invention utilizes the characteristic that the turn-on voltage Vd of the forward diode has a negative temperature characteristic and the voltage of the reverse diode BV has a positive temperature characteristic to compensate each other to achieve the purpose of reducing the te...

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Abstract

In the disclosed structure of clamping diode, two P-N-P diodes inverted connected are prepared in N trap or two N-P-N diodes inverted connected are prepared in independent P trap separated by N trap and burial type N trap. The invention is capable of shrinking area for circuit of controlling voltage, carrying out compensation by using reversed temperature coefficients of diodes inverted connected, and reducing deflection of temperature characteristic realized in only one part. Advantages are: easy of implementation in technique, and suitable to semiconductor integrated circuit (SIC) and discrete components; substituting voltage stabilizing circuit (BGR) in general logic circuit, EEPEOM or in Flash circuit.

Description

technical field [0001] The invention relates to an embedded diode structure suitable for semiconductor integrated circuits and separate components. Background technique [0002] In EEPEOM or Flash circuits, in order to ensure effective erasing times and storage time, it is necessary to precisely control the boost value of the voltage pump. In the prior art, a voltage stabilizing circuit is used for realization, but the problem of this approach is that the area of ​​the control circuit is too large, especially for small-capacity memories. In addition, general diodes have a large temperature characteristic shift problem, that is, their clamping voltage will shift with temperature. Contents of the invention [0003] The technical problem solved by the present invention is to provide an embedded diode structure, which can reduce the area of ​​the voltage control circuit and reduce the deviation of temperature characteristics without adding any photolithography and process ste...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861
Inventor 徐向明李平梁
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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