No-prebaking sodium bismuth titanate-barium titanate lead-less piezoelectric ceramic doping material and its prepn
A pre-fired sodium bismuth titanate, lead-free piezoelectric technology, applied in non-pre-fired bismuth sodium titanate-barium titanate lead-free piezoelectric ceramic doping materials and its preparation, bismuth sodium titanate-titanic acid In the field of barium lead-free piezoelectric ceramics, it can solve the problems of high energy and time and high cost, and achieve excellent piezoelectric ferroelectric performance, energy saving and production time.
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Embodiment 1
[0029] Formulation: 0.93 Bi 0.5 Na 0.5 TiO 3 +0.07BaTiO 3
[0030] Method: direct sintering
[0031] Performance: d 33 (pC / N) g 33 (mVm·N -1 ) tg δ(%) ε T 33 / ε 0 k t / k p
[0032] 166 19.98 3.35 939 1.49
[0033] Method: pre-fired at 860°C and then sintered
[0034] Performance: d 33 (pC / N)g 33 (mVm·N -1 ) tg δ(%) ε T 33 / ε 0 k t / k p
[0035] 138 17.46 3.7 893 1.32
Embodiment 2
[0037] Formulation: 0.93 Bi 0.5 Na 0.5 TiO 3 +0.07BaTiO 3 +0.01wt%In 2 o 3
[0038] Method: direct sintering
[0039] Performance: d 33 (pC / N) g 33 (mVm·N -1 ) tg δ(%) ε T 33 / ε 0 k t / k p
[0040] 183 20.34 3.43 1014 2.32
[0041] Method: pre-fired at 860°C and then sintered
[0042] Performance: d 33 (pC / N)g 33 (mVm·N -1 ) tg δ(%) ε T 33 / ε 0 k t / k p
[0043] 138 20.12 3.80 775 1.58
Embodiment 3
[0045] Formulation: 0.93 Bi 0.5 Na 0.5 TiO 3 +0.07BaTiO 3 +0.014wt%In 2 o 3
[0046] Method: direct sintering
[0047] Performance: d 33 (pC / N)g 33 (mVm·N -1 ) tg δ(%) ε T 33 / ε 0 k t / k p
[0048] 194 20.17 3.86 1087 2.18
[0049] Method: pre-fired at 860°C and then sintered
[0050] Performance: d 33 (pC / N)g 33 (mVm·N -1 ) tg δ(%) ε T 33 / ε 0 k t / k p
[0051] 146 17.59 4.00 938 1.31
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