Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device
A perovskite type, oxide technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc.
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example 1
[0241] Comparative Example 1 of the piezoelectric device was prepared as follows.
Embodiment 2
[0254] The specific embodiment 2 of the piezoelectric device according to the present invention is prepared as follows,
[0255] First, prepare the SiO 2 layer of SiO with a thickness of 0.1 μm 2 / Si substrate. Then, in the SiO 2 A contact layer of titanium with a thickness of 20 nm was formed on the / Si substrate, and a lower electrode of platinum with a thickness of 0.2 μm was formed by sputtering. After that, Nb-doped PZT, Pb(Ti, Zr, Nb)O with a thickness of 5.0 μm were formed by sputtering at a substrate temperature of 525° C. 3 (Specifically, PbZr 0.44 Ti 0.44 Nb 0.12 O 3 ), and then annealed at 650 °C in an oxygen atmosphere. Further, an upper electrode of platinum with a thickness of 0.2 μm was formed on the piezoelectric film by sputtering. Thus, the piezoelectric device according to the present invention is obtained.
[0256] The present inventors performed high-resolution X-ray diffraction (high-resolution XRD) measurements on the piezoelectri...
specific Embodiment 3
[0265] Specific Example 3 of the piezoelectric device according to the present invention was prepared as follows.
[0266] First, prepare the SiO 2 layer of SiO with a thickness of 0.1 μm 2 / Si substrate. Then, in the SiO 2 A contact layer of titanium with a thickness of 20 nm was formed on the / Si substrate, and a lower electrode of platinum with a thickness of 0.13 μm was formed by sputtering. After that, Nb-doped PZT, Pb(Ti, Zr, Nb)O with a thickness of 2.4 μm were formed by sputtering at a substrate temperature of 525° C. 3 piezoelectric film. Further, an upper electrode of platinum with a thickness of 0.2 μm was formed on the piezoelectric film by sputtering. Thus, the piezoelectric device according to the present invention is obtained.
[0267] The present inventors performed thickness measurement and X-ray fluorescence (XRF) measurement on the piezoelectric film as Specific Example 3. Table 3 shows the measured values of thickness and composition (mol...
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