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Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device

A perovskite type, oxide technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc.

Active Publication Date: 2013-03-06
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, the piezoelectric device disclosed in Japanese Patent No. 3568107 cannot utilize phase transitions other than the phase transition between the ferroelectric phase and the paraelectric phase
In addition, the piezoelectric device disclosed in Japanese Patent No. 3568107 exhibits no piezoelectric effect of expansion in the polarization direction in response to the application of an electric field after the phase transition since spontaneous polarization does not occur in paraelectric materials.

Method used

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  • Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device
  • Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device
  • Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device

Examples

Experimental program
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Effect test

example 1

[0241] Comparative Example 1 of the piezoelectric device was prepared as follows.

Embodiment 2

[0254] The specific embodiment 2 of the piezoelectric device according to the present invention is prepared as follows,

[0255] First, prepare the SiO 2 layer of SiO with a thickness of 0.1 μm 2 / Si substrate. Then, in the SiO 2 A contact layer of titanium with a thickness of 20 nm was formed on the / Si substrate, and a lower electrode of platinum with a thickness of 0.2 μm was formed by sputtering. After that, Nb-doped PZT, Pb(Ti, Zr, Nb)O with a thickness of 5.0 μm were formed by sputtering at a substrate temperature of 525° C. 3 (Specifically, PbZr 0.44 Ti 0.44 Nb 0.12 O 3 ), and then annealed at 650 °C in an oxygen atmosphere. Further, an upper electrode of platinum with a thickness of 0.2 μm was formed on the piezoelectric film by sputtering. Thus, the piezoelectric device according to the present invention is obtained.

[0256] The present inventors performed high-resolution X-ray diffraction (high-resolution XRD) measurements on the piezoelectri...

specific Embodiment 3

[0265] Specific Example 3 of the piezoelectric device according to the present invention was prepared as follows.

[0266] First, prepare the SiO 2 layer of SiO with a thickness of 0.1 μm 2 / Si substrate. Then, in the SiO 2 A contact layer of titanium with a thickness of 20 nm was formed on the / Si substrate, and a lower electrode of platinum with a thickness of 0.13 μm was formed by sputtering. After that, Nb-doped PZT, Pb(Ti, Zr, Nb)O with a thickness of 2.4 μm were formed by sputtering at a substrate temperature of 525° C. 3 piezoelectric film. Further, an upper electrode of platinum with a thickness of 0.2 μm was formed on the piezoelectric film by sputtering. Thus, the piezoelectric device according to the present invention is obtained.

[0267] The present inventors performed thickness measurement and X-ray fluorescence (XRF) measurement on the piezoelectric film as Specific Example 3. Table 3 shows the measured values ​​of thickness and composition (mol...

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Abstract

A process for producing a piezoelectric oxide having a composition expressed by the compositional formulas (A, B, C) (D, E, F) O 3 , where each of A, B, C, D, E, and F represents one or more metal elements. The composition is determined so as to satisfy the conditions (1), (2), (3), and (4), 0.98 ‰¤ TF P ‰¤ 1.01 , TF ADO 3 > 1.0 , TF BEO 3 < 1.0 , and TF BEO 3 < TF CFO 3 < TF ADO 3 , where TF(P) is the tolerance factor of the compound expressed by the compositional formula (A, B, C) (D, E, F) O 3 , and TF(ADO 3 ), TF(BEO 3 ), and TF(CFO 3 ) are respectively the tolerance factors of the compounds expressed by the compositional formulas ADO 3 , BEO 3 , and CFO 3 .

Description

Technical field [0001] The present invention involves perovskite -type oxides and used to prepare the perovskite oxide.Device and liquid discharge device with the voltage body. Background technique [0002] At present, for example, a piezoelectric device composed of piezoelectric and electrode is used as an force installed on the inkjet recorder.In this piezoelectric device, the strength of the electrical field is increased and reduced according to the electrode in the predetermined direction, and the voltage body expands and shrinks.For example, perovskite oxides such as PZT (titanium titanate) are known materials suitable for piezoelectric.Such materials are iron electrical materials that are refined by polarization even when they do not apply the electric field.According to reports, the piezoelectric material affects high voltage performance in the Morphotropic Phase Boundary (MPB) and its nearby. [0003] PZT is PBTIO 3 (PT) and PBZRO 3 (PZ) solid solution. Figure 14 It is t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/187C04B35/01H10N30/85H10N30/076H10N30/097H10N30/80H10N30/853H10N30/87H10N60/30
CPCC04B2235/3296C04B2235/768C04B35/457C04B35/2683H01L41/1871H01L41/1878H01L41/43H01L41/0805H01L41/316C04B2235/762H01L41/1876C04B2235/3234C04B2235/3298B41J2/14233H10N30/8536H10N30/8561H10N30/8554H10N30/076H10N30/097H10N30/704
Inventor 坂下幸雄佐佐木勉
Owner FUJIFILM CORP
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