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Technology for producing titanium nitride composite ceramic

A composite ceramic, titanium nitride technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of industrial pollution, poor wrapping, low bonding strength, etc.

Inactive Publication Date: 2008-01-16
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because chemical vapor deposition requires a set of equipment to provide titanium-containing halide gas, the process is complex and the cost is high, and the CVD process also has its inherent defects. First, the film is in a state of tensile stress, which is easy to cause microcracks during use. Second, the waste gas and waste liquid discharged by the CVD process will cause industrial pollution. The halide gas not only has a corrosive effect on the equipment but also has a greater impact on the environment, which conflicts with the green industry currently advocated. Therefore, after the mid-1990s The development of CVD technology has been restricted to a certain extent; compared with the CVD method, the TiN coating prepared by the general PVD deposition method is thinner, generally 1-3 μm, and the adhesion fastness to the substrate is slightly lower. Low, and the coating is poor, because of the low bonding strength, it is easy to peel off from the substrate, which affects the service life of the parts; other technical equipment is expensive and costly, and most of them form coatings, which are also subject to certain restrictions in use. limit

Method used

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  • Technology for producing titanium nitride composite ceramic

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0017] The metal titanium to be infiltrated is inserted into the upper plate of the metal source 2 or the surrounding drum in the form of titanium wire, the metal workpiece 3 to be infiltrated is placed on the cathode, and the anode is connected to the furnace shell of the vacuum vessel 1 and grounded. The vacuum container 1 is first pumped to 1Pa by the mechanical pump pumping system 5, and then pumped to 5.0×10 by the molecular pump pumping system 6. -3 After Pa vacuum degree, pass argon gas to 8Pa at a flow rate of 50ml / min, use low current and high voltage above 600V to clean the surface of the workpiece for 2min-10min, pass argon gas to 20Pa, metal source 2 and infiltrated metal workpiece 3 Add an equal DC voltage of 200V to raise the temperature of the infiltrated metal workpiece to 800°C. The sputtered titanium is adsorbed on the infiltrated metal workpiece in the form of atoms and ions, and is kept warm for 3 hours to make the infiltrated metal workpiece 3 solid solutio...

Embodiment approach 2

[0019] The process is basically the same as that of Embodiment 1, and the process parameters are changed as follows: when infiltrating titanium, the argon gas is passed to 30Pa, the metal source 2 and the infiltrated metal workpiece 3 are supplied with an equal DC voltage of 350V, the temperature of the infiltrated metal workpiece is 920°C, and the heat preservation time is 3 hour, the titanium permeation diffusion layer is 12 μm; when forming the TiN composite permeation layer, the flow ratio of argon gas to nitrogen gas is 100:6, the metal source 2 and the infiltrated metal workpiece 3 have a DC voltage of 350V, an air pressure of 35Pa, and the temperature of the infiltrated metal workpiece 920°C, heat preservation for 2 hours, the TiN composite coating layer is 12μm, and the surface hardness is 2200Hv 0.1 .

Embodiment approach 3

[0021] The process is basically the same as that of Embodiment 1, and the process parameters are changed as follows: when infiltrating titanium, the argon gas is passed to 40Pa, the metal source 2 and the infiltrated metal workpiece 3 are supplied with an equal DC voltage of 500V, the temperature of the infiltrated metal workpiece is 1020°C, and the heat preservation time is 2 hour, the titanium permeation diffusion layer is 13 μm; when forming the TiN composite permeation layer, the flow ratio of argon and nitrogen is 100:9, the metal source 2 and the infiltrated metal workpiece 3 have a DC voltage of 500V, an air pressure of 45Pa, and the temperature of the infiltrated metal workpiece 1020°C, heat preservation for 3 hours, the TiN composite coating layer is 20μm, and the surface hardness is 2400Hv 0.1 .

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Abstract

The composite titanium nitride ceramic preparing process belongs to the field of metallurgical modification technology for metal material surface. The present invention features that inside vacuum container, Ar is introduced and titanium filament is sputtered with low voltage power source to form high density titanium ions and atoms, which are adsorbed onto the bombarded and heated workpiece surface to form penetrated and diffused layer. Then, mixed gas of Ar and N2 is introduced so as to produce chemical reaction with sputtered and diffused Ti on the surface of the workpiece to form TiN alloy layer up to 10 microns. The TiN alloy layer has gradient distributed Ti and N components and thus high combining strength between the TiN alloy layer and the substrate.

Description

1. Technical field [0001] The invention discloses a process for preparing titanium nitride composite ceramics, which belongs to the category of surface metallurgical modification technology of metal materials. 2. Background technology [0002] Compound TiN composed of Ti and N 1-x It can exist stably in a wide range of composition, among which TiN with F.C.C structure has high hardness, low friction coefficient, high adhesion strength, good chemical stability, beautiful golden yellow, good electrical conductivity, thermal conductivity and steel material It is widely used in aviation, aerospace, machinery, transportation, petrochemical, medical and other fields due to its similar thermal expansion coefficient. Especially used as high-quality cutting tools, surface engineering materials for anti-abrasion, abrasion and wear parts, it has broad application prospects. [0003] At present, the main methods for preparing TiN are chemical vapor deposition (CVD), physical vapor dep...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/38
Inventor 徐重刘燕萍高原徐晋勇
Owner TAIYUAN UNIV OF TECH