Method and device for separating crystal ingot from pyrolyzed boron nitride crucible

Abstract

The present invention belongs to the field of semiconductor manufacture technology, and is especially method and apparatus for separating crystal ingot from pyrolyzed boron nitride (PBN) crucible in semiconductor monocrystal growing process. The apparatus includes one temperature control device, one heating furnace, one PBN crucible supporting system, and one ultrasonic generator. The method includes the following steps: setting the grown crystal ingot and the PBN crucible inside the heating furnace for raising temperature, maintaining and lowering temperature under the control of the temperature control device; and setting the crystal ingot and the PBN crucible in methanol inside the case of the ultrasonic generator after their temperature is lowered to room temperature for ultrasonic treatment to eliminate residual B2O3 between the crystal ingot and the PBN crucible and to separate the crystal ingot from the PBN crucible fluently.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method and equipment for detaching a crystal ingot from a PBN crucible in the process of growing a semiconductor single crystal by a VGF method or a VB method. Background technique [0002] III-V compound semiconductor materials are an important part of semiconductor materials, among which gallium arsenide and indium phosphide have received extensive attention as the basic materials for the development of ultra-high-speed integrated circuits, microwave monolithic circuits, optoelectronic devices and their optoelectronic integration . Especially the VGF method or VB method can grow large-diameter, low dislocation, low thermal stress, high-quality gallium arsenide single crystal, and its application prospect is very wide, which can be used to manufacture LED, LD and GaAs IC. [0003] However, after the bulk single crystal is grown by the VGF or VB method, the gap between ...

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Problems solved by technology

[0003] However, after the bulk single crystal is grown by the VGF or VB method, the gap between the crystal ingot and the PBN crucible is caused by boron trioxide B 2 o 3 Due to the influence of coverage and adhesion, it is difficult to separate. The traditional process mostly uses methanol water bath to separate it. Due to the contact with water, B 2 o 3 Expansion, the crucible will crack if you don't pay attention

Even if the ingot is successfully removed, the inner wall of the PBN crucible will be severely peeled and delaminated because the time for the ingot removal is too long, which will directly affect the service life of the PBN crucible and the growth of the next bulk single crystal. At the same time, the high damage of the PBN crucible The rate also increases the cost of industrial production

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