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Molecular beam epitaxy growth apparatus and method of controlling same

A molecular beam epitaxy, molecular beam technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve problems such as difficult to control proportions

Inactive Publication Date: 2008-05-14
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of crystals containing multiple group V materials, such as GaInAsP, the factor of supplying As and P molecular beams in sufficient quantities makes it difficult to control the ratio between As and P within the crystal.

Method used

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  • Molecular beam epitaxy growth apparatus and method of controlling same
  • Molecular beam epitaxy growth apparatus and method of controlling same
  • Molecular beam epitaxy growth apparatus and method of controlling same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] An overview of molecular beam epitaxy growth equipment-

[0038] figure 1 is a view showing a schematic form of an example of a molecular beam epitaxial growth apparatus according to Embodiment 1.

[0039] The molecular beam epitaxy growth equipment of this example is equipped with vacuum chamber 1, substrate manipulator 2, Ga emission tube (group III molecular beam source emission tube) 3, In emission tube (group III molecular beam source emission tube) 4, As emission tube (Group V molecular beam source emission tube) 5, P emission tube (group V molecular beam source emission tube) 6, etc.

[0040] Evacuate vacuum chamber 1 to 2×10 -9 bar while all heaters (not shown) are turned off. The substrate manipulator 2 is installed in the upper central area of ​​the vacuum chamber 1 .

[0041] The substrate manipulator 2 is internally equipped with a substrate heating mechanism and a substrate rotating mechanism (neither of which are shown), allowing the substrate 200 hel...

Embodiment 2

[0072] Figure 7 and 8 are a front view and a plan view respectively showing a schematic form of a different exemplary structure of a molecular beam epitaxial growth apparatus according to Embodiment 2.

[0073] The molecular beam epitaxy growth equipment of this example is equipped with vacuum chamber 1, substrate manipulator 2, Ga emission tube (group III molecular beam source emission tube) 3, In emission tube (group III molecular beam source emission tube) 4, As emission tube (Group V molecular beam source emission tube) 5, P emission tube (group V molecular beam source emission tube) 6, etc.

[0074] Vacuum chamber 1 is evacuated to 2×10 -9 bar while all heaters are turned off. The substrate manipulator 2 is installed in the upper central area of ​​the vacuum chamber 1 .

[0075] The substrate manipulator 2 incorporates a substrate heating mechanism and a substrate rotating mechanism (neither of which are shown), allowing the substrate 200 held by this substrate manip...

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Abstract

In system(s) utilizing multiple molecular beams of group V material(s) (and / or group VI material(s)), rotary beam chopper(s) 8 and so forth are installed in front of respective discharge port(s) of such plurality of group V molecular beam source cell(s) 5, 6 (and / or group VI molecular beam source cell(s)); intermittency control causing molecular beam(s) discharged from respective molecular beam source cell(s) 5, 6 to be repeatedly blocked and discharged in periodic fashion is carried out; and mutual synchronization of such molecular beam(s) subjected to intermittency control causes supply of respective molecular beam(s) of multiple group V materials (and / or group VI materials) in sufficient quantity or quantities as necessary for crystal growth, with alloy ratio(s) within crystal(s) being efficiently controlled.

Description

[0001] Requirements associated with related applications and / or prior claims [0002] This application claims priority under 35USC119(a) to Patent Application No. 2003-300078 filed in Japan on Aug. 25, 2003, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates to molecular beam epitaxy (MBE) growth equipment and methods of controlling the same. Background of the invention [0004] exist Figure 9 The structure of a typical molecular beam epitaxy growth equipment (MBE equipment) is shown in . [0005] Figure 9 The molecular beam epitaxial growth apparatus shown in is equipped with a vacuum chamber 101 capable of being pumped to an ultra-high vacuum; a substrate manipulator 102 that heats and rotates the substrate 200 when the substrate 200 is held at a prescribed position in the vacuum chamber 101; A plurality of molecular beam source emission tubes 103, 104, 105, and 106 emitting molecular beams toward...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/203C23C14/22C30B23/02C30B23/08C30B29/42C30B35/00
CPCC30B23/02C30B29/42C30B35/00C30B23/002
Inventor 川崎崇士
Owner SHARP KK