System and method of heat dissipation in semiconductor devices
A semiconductor and conductor technology, applied in the design and manufacture of semiconductor devices, can solve problems such as poor thermal conductivity
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[0047] Below, please refer to figure 1 , which shows a cross-sectional view of a part of a semiconductor device according to an embodiment of the present invention. In this embodiment, the substrate 10 may comprise a field effect transistor having source and drain regions 12 and a gate 14 . Substrate 10 may also include a field oxide layer 16 and a relatively thick layer 18 of borophosphosilicate glass (BPSG). Alternative embodiments may include a shallow trench isolation or split gate. Although N+ source and drain regions 12 are shown in the drawings, those skilled in the art will appreciate that the conductivity types may be different. In this embodiment, a first level metallurgical layer may exist on the surface of the substrate 10 and may include metal lines 20 (one or more closely spaced operational wires), and a more distantly spaced operational metal wire 22 . In order to properly construct the wires 20 and 22, the necessary width of the wires and the distance betwee...
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