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System and method of heat dissipation in semiconductor devices

A semiconductor and conductor technology, applied in the design and manufacture of semiconductor devices, can solve problems such as poor thermal conductivity

Active Publication Date: 2008-05-14
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most low dielectric materials have poor thermal conductivity

Method used

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  • System and method of heat dissipation in semiconductor devices
  • System and method of heat dissipation in semiconductor devices
  • System and method of heat dissipation in semiconductor devices

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Embodiment Construction

[0047] Below, please refer to figure 1 , which shows a cross-sectional view of a part of a semiconductor device according to an embodiment of the present invention. In this embodiment, the substrate 10 may comprise a field effect transistor having source and drain regions 12 and a gate 14 . Substrate 10 may also include a field oxide layer 16 and a relatively thick layer 18 of borophosphosilicate glass (BPSG). Alternative embodiments may include a shallow trench isolation or split gate. Although N+ source and drain regions 12 are shown in the drawings, those skilled in the art will appreciate that the conductivity types may be different. In this embodiment, a first level metallurgical layer may exist on the surface of the substrate 10 and may include metal lines 20 (one or more closely spaced operational wires), and a more distantly spaced operational metal wire 22 . In order to properly construct the wires 20 and 22, the necessary width of the wires and the distance betwee...

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Abstract

The present disclosure provides a method and system for heat dissipation in semiconductor devices. In one example, an integrated circuit semiconductor device includes a semiconductor substrate; one or more metallurgy layers connected to the semiconductor substrate, and each of the one or more metallurgy layers includes: one or more conductive lines; and one or more dummy structures between the one or more conductive lines and at least two of the one or more dummy structures are connected; and one or more dielectric layers between the one or more metallurgy layers.

Description

technical field [0001] The present invention relates to the design and manufacture of semiconductor devices, and more particularly to a system and method for dissipating heat from semiconductor devices. Background technique [0002] The effect of heat dissipation from semiconductor devices is well known. For example, a typical microprocessor typically consumes about 40 watts of electricity, most of which eventually turns into heat. However, if the heat is not dissipated properly, the performance of the electronic device can be reduced - poor heat dissipation can cause damage to the electronic device and reduce the reliability and life expectancy of the device. [0003] Generally, heat generated in semiconductors is dissipated by conduction through the device. Heat is usually dissipated simply through the materials used to form the underlying wiring structure of the semiconductor device. Often no special structures are provided to assist in heat dissipation within semicond...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/04H01L23/52H01L23/34H01L21/82H01L21/768H01L21/3205H01L21/44H01L23/433H01L23/528
CPCH01L2924/0002H01L21/76834H01L23/4334H01L23/528H01L21/76837H01L2924/00
Inventor 陈宪伟叶俊麟郑心圃郑义荣
Owner TAIWAN SEMICON MFG CO LTD