Test key structure

A technology for testing keys and joints, which is applied in semiconductor/solid-state device testing/measurement, electrical components, electric solid-state devices, etc., and can solve problems such as the inability to know the influence of spacers

Active Publication Date: 2008-08-27
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] But by figure 1 and figure 2 It can be seen that the existing test key does not take the polysilicon gate and spacer of general semiconductor components into the structural design considerations, so it is impossible to know the influence of the spacer on the entire component, such as the heat caused by the deposition of the spacer. Lightly doped junction impurity (dopant) out-diffusion (out-diffusion) problem

Method used

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no. 1 example

[0040] image 3 is a top view of the test key structure according to the first embodiment of the present invention, and Figure 4 Yes image 3 Schematic cross-section of the IV-IV line segment.

[0041] Please refer to image 3 and Figure 4 The test key structure of this embodiment includes a substrate 400, a closed loop 300, a spacer 310, a first doped region 312 and a second doped region 314, and contact windows 316a, 316b, wherein the closed loop 300 is, for example, a polysilicon layer. The aforementioned closed circuit 300 is located on the base 400, and has two wires 302 and two connecting parts 304, wherein each connecting part 304 is connected to one end of the wires 302 and surrounds a contact area 318, and the shape of this closed circuit 300 may include Dog-bone shape or other suitable shapes, and the wire 302 is not limited to a straight line, but can also be a curved line or a broken line. The spacer 310 is disposed on the edge of the closed loop 300 and cov...

no. 2 example

[0046] Figure 5 It is a top view of the test key structure according to the second embodiment of the present invention. Please refer to the following description for the structural differences between it and the first embodiment. and, Figure 5 The same reference numerals as those of the first embodiment are used in part of the drawings to denote the same components.

[0047] Please refer to Figure 5 , which includes a substrate 400, two wires 500, a spacer 310, a first doped region 312, a second doped region 314, and contact windows 510a, 510b. The wire 500 may be a polysilicon layer. Moreover, the two wires 500 are arranged side by side on the substrate 400, and have a middle portion 502 and two end portions 504, and the distance D1 between the middle portion 502 of each wire 500 is smaller than the distance D2 between the end portions 504 of each wire 500 . Moreover, the spacer 310 is disposed on the edge of the conductive wire 500 and covers the base 400 between the ...

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Abstract

This invention relates to a test key structure composed of a base, a closed loop, a clearance wall, a first and a second doped areas and a contact window, in which, the closed loop is set on the base having two leads and two connecting parts, each of which is connected with one end of the lead and surrounds a contact region, the clearance wall is set at the edge of the loop and covers the base between the leads, the first doped region is placed at the base out of the loop and the clearance wall and the second doped region is placed in the base under the clearance wall and the contact window is connected with the first doped region in the contact region.

Description

technical field [0001] The present invention relates to a test key structure, in particular to a test key structure for detecting the influence of spacer walls on the whole component. Background technique [0002] In order to improve the yield of products, semiconductor manufacturers usually design various test keys for each part of the product before mass production, to detect unexpected errors in the process, so as to improve the process for the faulty part. [0003] figure 1 is a top view of an existing test key structure, and figure 2 Yes figure 1 The schematic cross-section of the II-II line segment. [0004] Please refer to figure 1 and figure 2 , the existing test key structure used to test the lightly doped drain (LDD) region is composed of a substrate 100, a lightly doped drain region 102, a source and drain region 104, and contact windows 106a, 106b , and usually a layer of self-aligned silicide block layer (silicide block layer) 108 is covered on the surfa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544H01L21/66
Inventor 陈铭聪龚佑仪戎乐天
Owner UNITED MICROELECTRONICS CORP
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