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Photomask pattern layout method for pattern transfer and photomask thereof

A technology for pattern transfer and pattern layout, which is applied in the field of pattern layout of photomasks for pattern transfer and photomasks for pattern transfer, and can solve problems such as the influence of component characteristics.

Inactive Publication Date: 2008-09-17
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the occurrence of the unexpected protrusion, the gate pattern 133b reaches the active region 201, which sometimes has a great influence on the device characteristics.

Method used

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  • Photomask pattern layout method for pattern transfer and photomask thereof
  • Photomask pattern layout method for pattern transfer and photomask thereof
  • Photomask pattern layout method for pattern transfer and photomask thereof

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0057] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0058] (Embodiment 1)

[0059] figure 1 To correspond to that explained in the existing example Figure 11 The diagram of the main pattern layout is, in the case of two main patterns 11a and 11b arranged in parallel at a dense pitch. One main pattern 11b is a layout that is intermittent on the way.

[0060] like figure 1 As shown, the strip-shaped main pattern 11b is arranged in parallel with the strip-shaped main pattern 11a. The main pattern 11b is shorter than the main pattern 11a, and 11b is cut off halfway. Therefore, the main pattern 11a has: a parallel portion 11a4 parallel to the main pattern 11b; and a non-parallel portion 11a5 not parallel to the main pattern 11b.

[0061] Based on the layout of the above-mentioned main graphics, the auxiliary graphics are temporarily arranged automatically in accordance with prescribed rules. Since the two main patte...

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Abstract

In the layout of a photomask for pattern transfer, main patterns for transferring an image to a photosensitive film are positioned; auxiliary patterns, which do not substantially transfer an image to a photosensitive film are temporarily positioned; an auxiliary pattern is selected so an end partially overlaps an end of the main pattern and makes contact with the main pattern; and adjusting the position of the auxiliary pattern selected so that the end of the auxiliary pattern selected completely overlaps the end of the main pattern. Inspection of the photomask for mask defects is simplified while achieving an increase in resolution of a photomask for pattern transfer.

Description

technical field [0001] The present invention relates to a pattern layout method of a photomask for pattern transfer used in a photolithography process in a semiconductor manufacturing process and a photomask for pattern transfer, more specifically, to a method for transferring an image to a photosensitive film. The pattern layout method of the photomask for pattern transfer of the strip pattern and the auxiliary pattern set to ensure a deep depth of focus, and the photomask for pattern transfer. Background technique [0002] In recent years, the high integration of semiconductor devices has progressed surprisingly. There are various steps in the manufacturing process of semiconductor devices, and it has been widely recognized that the photolithography step is a key step toward high integration of semiconductor devices in particular. [0003] Examples of the manufacturing process of a semiconductor device using photolithography include various processes such as an element is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027G03F1/08G03F1/36G03F1/68G03F1/70
CPCG03F1/144G03F1/36H01L21/027
Inventor 玉田尚久
Owner MITSUBISHI ELECTRIC CORP
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