Unlock instant, AI-driven research and patent intelligence for your innovation.

Prepn process of self-holing polyimide with organosilicon block

A technology of polyimide and organosilicon, which is applied in the field of preparation of organosilicon block spontaneous porous polyimide, can solve the problems of complexity, low enough dielectric constant of material, difficulty in control, etc., and achieve stable performance and good transparency Wave performance, effect of low dielectric constant

Inactive Publication Date: 2008-10-22
NANJING UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, some of the above-mentioned various methods for preparing organosilicon or porous polyimide materials are too complicated and difficult to control, and some of the prepared materials have a low dielectric constant.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Prepn process of self-holing polyimide with organosilicon block
  • Prepn process of self-holing polyimide with organosilicon block
  • Prepn process of self-holing polyimide with organosilicon block

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Dissolve 100g of diaminomethyl silicone oil (Mn=1000) in 5L of solvent (DMF:THF=1:1) in a stirring vessel, add 218g of PMDA and 198g of ODA and react at 50°C for 2 hours, then add 23.6g of MDI at 40°C The reaction was continued for 4 hours. The reaction was carried out under the protection of nitrogen. Finally, a silicone block polyamic acid solution dispersion of A:B:C:D=1:10:8:1 was prepared, poured out to form a film, and imidized under nitrogen protection at 300°C for 2 hours. The dielectric constant of the material is k=2.5, the Young's modulus is 1.1GPa, the thermal decomposition temperature is greater than 450°C, and it does not swell in water or DMF. The dielectric properties remain unchanged after being placed in a humid environment for 6 months.

[0031] The dielectric analysis of the sample is to first coat the high-purity conductive silver paste on both sides of the sample, and use it as a test electrode after drying, and accurately measure the effective a...

Embodiment 2

[0034] Dissolve 400g of diaminophenyl silicone oil (Mn=2000) in 10L solvent (DMAc:THF=1:1) in a stirring vessel, add 294gBTDA and 118.8gMDA and react at 60°C for 3 hours, then add 34.8g TDI at 50°C The reaction was continued for 5 hours. The reaction was carried out under the protection of argon. Finally, a silicone block polyamic acid solution dispersion of A:B:C:D=1:5:3:1 was prepared, poured out to form a film, and imidized under argon protection at 350°C for 4 hours. The dielectric constant k of the material is 2.6, the Young's modulus is 1.5GPa, the thermal decomposition temperature is greater than 500°C, and it does not swell in water, DMF, or DMAc. The dielectric properties remain unchanged after being placed in a humid environment for 8 months.

[0035] Test method is the same as embodiment 1.

Embodiment 3

[0037] Dissolve 300g of diaminohydrogen-containing methyl silicone oil (Mn=3000) in 2L of solvent (DMSO: DMAc: THF = 1: 1: 2) in a stirred vessel, add 444g of 6FDA and 232.4g of 4,4 6FDAm and react at 70°C After 2.5 hours, 41.6 g of IPDI was added and the reaction was continued for 4 hours at 60°C. The reaction was carried out under the protection of argon. Finally, a silicone block polyamic acid solution dispersion of A:B:C:D=1:10:7:2 was prepared, poured out to form a film, and imidized at 280°C for 2.5 hours under the protection of argon. The dielectric constant of the material is k=2.3, the Young's modulus is 1.2GPa, the thermal decomposition temperature is higher than 400°C, and it does not swell in water, DMF, or DMAc. The dielectric properties remain unchanged after being placed in a humid environment for 3 months.

[0038] Test method is the same as embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The preparation process of self-holing polyimide with organosilicon block includes the following steps: 1) the first reaction of polyacid anhydride in functionality not lower than 2, silicon oil with 2 or more amino or imino groups and polyamine with 2 or more amino groups, and the second reaction with one or several kinds of added isocyanate with 2 or more isocyanate radicals to produce sol of polyamido acid containing organosilicon block; 2) solidifying the sol to obtain solid polyamido acid containing organosilicon block; and 3) imidonating the solid to obtain self-holing polyimide with organosilicon block. The preparation process is simple and the prepared material may be compounded with glass fiber, silicon carbide fiber, nylon fiber, etc. The polyimide material has low dielectric constant, stable performance in wet condition and excellent wave permeating performance, and may be used in electronic, communication and other fields.

Description

1. Technical field [0001] The invention relates to a method for preparing organic silicon block spontaneously porous polyimide. The low-dielectric and moisture-resistant material coating prepared by the method can be used in the fields of electronics, communication, military affairs, etc., and is especially useful in wave-transparent materials. Wider range of uses. 2. Background technology [0002] Polyimide (PI) is a kind of high-temperature-resistant polymer material with excellent comprehensive properties. Due to its outstanding heat resistance, good mechanical properties, electrical properties, dimensional stability, chemical corrosion and radiation resistance, etc. The development of polyimide is very rapid, and derived a series of commercial products. At present, polyimide has been widely used in many industries such as electromechanical, electronic, and aerospace industries. [0003] Polyimide (PI) is produced by the reaction of diamines and dianhydrides (Diangydrid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C08G73/10
Inventor 贾叙东袭锴何辉葛仁杰徐丹余学海
Owner NANJING UNIV