Double-layer anti-reflection film for ultraviolet detector and its preparation method
A technology of anti-reflection film and detector, which is applied in optics, instruments, coatings, etc., can solve the problems of poor anti-ion contamination, low efficiency of anti-reflection film, weak anti-radiation performance, etc., and achieve good adhesion and improved Quantum efficiency and responsivity, strong effect against ion contamination
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Embodiment 1
[0029] see figure 1 and 2 , the Al of the embodiment of the present invention 2 o 3 / SiO 2Double-layer anti-reflection coating, including heavily doped n-type SiC substrate 1, SiO grown by electron beam evaporation method from bottom to top 2 Layer 3, Al grown by electron beam evaporation 2 o 3 Layer 4 and Ti / Au metal pad 5. The electrode finger pattern is formed by photolithography and corrosion, and the Ni / Au metal is sputtered by magnetron, and the electrode 2 is formed by stripping, and the electrode 2 and the substrate 1 are in Schottky contact.
[0030] The preparation method of the double-layer anti-reflection film for the ultraviolet light detector is given below.
[0031] 1. Standard cleaning of 4H-SiC substrate samples:
[0032] a. Ultrasonic cleaning with toluene, acetone and ethanol three times in sequence, and then rinse with deionized water.
[0033] b. Soak the rinsed substrate in diluted hydrofluoric acid (hydrogen fluoride: deionized water = 1:3 by vo...
Embodiment 2
[0041] Similar to Example 1, the difference is that in the standard cleaning of the 4H-SiC substrate sample, ultrasonic cleaning was performed twice with toluene, acetone and ethanol in sequence, and then rinsed with deionized water; the rinsed substrate was placed in a diluted Soak in hydrofluoric acid (by volume ratio hydrogen fluoride: deionized water = 1:3) for 3 minutes; put the substrate soaked in hydrofluoric acid into concentrated sulfuric acid and boil for 20 minutes; Solution and No. 2 solution were boiled for 10 minutes.
[0042] 2. Clean the electron beam evaporation chamber and put the evaporation source (Al 2 o 3 and JGS1 quartz crystal), put the cleaned substrate sample. Raise the temperature to 270°C, and evacuate until the vacuum degree reaches 3.5×10 -3 Pa. In order to prevent splashing and loss of oxygen, the material needs to be pre-melted before evaporation, and oxygen is passed to the oxygen partial pressure of 2.5×10 -3 Pa, the flow rate is 13.2 scc...
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