Metal polishing liquid and polishing method using it

A technology of grinding liquid and metal, which is applied in the direction of grinding equipment, grinding machine tools, metal processing equipment, etc., can solve problems such as difficulties, and achieve the effect of reducing grinding particles and high flatness

Active Publication Date: 2008-12-31
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the abrasive particles attached to the substrate become finer and finer, it becomes more and more difficult for physical forces to effectively act on the abrasive particles.

Method used

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  • Metal polishing liquid and polishing method using it

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～4 and comparative example 1

[0060] (Examples 1-4 and Comparative Example 1: Polishing liquid 1 for metal)

[0061] The metal grinding liquid 1 that uses is to contain the organic acid (oxidized metal dissolving agent) below 1 mass %, the nitrogen-containing cyclic compound (metal anticorrosion agent) below 0.5 mass %, the water-soluble macromolecular ( additive), hydrogen peroxide (oxidizing agent) and water at 10% by mass or less. In addition, the primary particle diameter is within the range of ±10% of the average value described in Table 1, and the secondary particle diameter is within the range of ±15% of the average value described in Table 1, and the surface potentials described in Table 1 are different. Abrasive particles are added to the metal abrasive liquid 1 .

[0062] In Examples 1 to 4 and Comparative Example 1, CMP was performed on the substrate to be polished under the following polishing conditions using the above-mentioned metal polishing solution 1 to which abrasive particles having di...

Embodiment 5 and comparative example 2

[0063] (Example 5 and Comparative Example 2: Polishing liquid 2 for metal)

[0064]The metal grinding liquid 2 that uses is to contain the following 0.5 mass % oxide metal dissolving agent, the nitrogen-containing cyclic compound (metal corrosion inhibitor) below 0.3 mass %, the water-soluble macromolecule (additive) below 0.5 mass %, 10 Mass % or less hydrogen peroxide (oxidizing agent) and water. In addition, the primary particle diameter is within the range of ±10% of the average value described in Table 1, and the secondary particle diameter is within the range of ±15% of the average value described in Table 1, and the surface potentials described in Table 1 are different. Grinding particles are added to the metal grinding liquid 2 .

[0065] In Example 5 and Comparative Example 2, CMP was performed under the following polishing conditions using the aforementioned metal polishing solution 2 to which abrasive particles having different surface potentials were added.

Embodiment 6 and comparative example 3

[0066] (Example 6 and Comparative Example 3: Polishing liquid 3 for metal)

[0067] The metal polishing solution 3 used contains not more than 1% by mass of an organic acid (a metal oxide dissolver), not more than 2% by mass of a water-soluble polymer (additive), not more than 10% by mass of hydrogen peroxide (an oxidizing agent) and water. In addition, the primary particle diameter is the average ± 10% of the average value recorded in Table 1, the secondary particle diameter is within the range of the average ± 15% of the average value recorded in Table 1, and abrasive particles with different surface potentials are added to the above-mentioned abrasive particles. In the metal grinding liquid 3 mentioned above.

[0068] In Example 6 and Comparative Example 3, CMP was performed on the substrate to be polished under the following polishing conditions using the above-mentioned metal polishing liquid 3 to which the polishing particles described in Table 1 having different surface...

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PUM

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Abstract

The present invention provides a metal-polishing liquid, comprising polishing particles and a chemical component, wherein the polishing particles have charges of surface potential of the same polarity as the charges of surface potential on the reaction layer, adsorption layer or the mixed layer thereof formed by the chemical component on a metal to be polished with the metal-polishing liquid, and a polishing method using the same, that enable to give highly flattened surface at high Cu-polishing speed and enable reduction of the number of the polishing particles remaining on the polished face after polishing.

Description

technical field [0001] The present invention relates to a metal polishing liquid and a polishing method using the same. Background technique [0002] In recent years, along with the high integration and high performance of semiconductor integrated circuits (hereinafter referred to as LSI), new microfabrication technologies have been developed. The chemical mechanical polishing (hereinafter referred to as CMP) method is one of them. It is a planarization of the interlayer insulating film in the LSI manufacturing process, especially in the multilayer wiring formation process, metal plug (plug) formation, embedding, etc. It is a technique frequently used in processes such as wiring formation (see, for example, US Patent No. 4,944,836). [0003] Furthermore, in order to improve the performance of LSI recently, attempts have been made to use copper alloys as wiring materials. However, copper alloys are difficult to microfabricate by conventional dry etching methods frequently u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304B24B37/00
Inventor 野村丰寺崎裕树小野裕上方康雄
Owner RESONAC CORPORATION
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