Semiconductor heterozygote and its lighting transistor
A technology of light-emitting transistors and heterojunctions, applied in the field of semiconductors, can solve the problems of electronic control that cannot be injected into the active area, and that the quantity cannot be controlled.
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[0028] like Figure 4 , grow 500nm n+ type doping concentration of 1×10 on n-type gallium arsenide (GaAs) substrate 1 19 cm -3 The AlInP electron emission region 3, the sudden growth on the emission region is 80nm, and the n-type doping concentration of the present invention is 1×10 18 cm -3 of (Al x Ga 1-x ) 0.4 In 0.6 P5{0.1y Ga 1-y ) 0.5 In 0.5 P{0.118 cm -3 The AlInP collector electrode 8, and then use the semiconductor planar process technology to make the p-type electrode C P 9, n+ type electrode En+4 and n-type electrode Bn-6, get image 3 Shown is a light-emitting transistor that can be controlled by the heterojunction of the present invention.
[0029] When the light-emitting transistor is working, a positive voltage V is applied between the collector 9 and the emitter 4 pn , V pn is 4.5V, the voltage of the base 6 gradually increases from 0V to the maximum voltage of the base region V nn when V nn 0.35V, electron movement behaves as figure 2 As show...
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