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Nonvolatile memory and producing method thereof

A technology of a non-volatile memory and a manufacturing method, applied in the field of semiconductor memory components, can solve the problems of high gate resistance of doped polysilicon and incomparable electrical properties of memory cells, so as to improve performance and stability, and reduce electrical property differences , the effect of reducing the resistance value

Inactive Publication Date: 2009-01-14
POWERCHIP SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Another object of the present invention is to provide a non-volatile memory to solve the problem that the resistance value of the doped polysilicon gate is too high, resulting in the electrical incompatibility between memory cells.

Method used

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  • Nonvolatile memory and producing method thereof
  • Nonvolatile memory and producing method thereof
  • Nonvolatile memory and producing method thereof

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Embodiment Construction

[0055] 2A to 2E are cross-sectional views showing the manufacturing process of a non-volatile memory according to a preferred embodiment of the present invention.

[0056] Referring to FIG. 2A , in this method, a substrate 200 is firstly provided, and a plurality of memory cells 202 are formed on the substrate 200 , with gaps 209 between these memory cells 202 . The memory cell 202 includes, for example, a composite dielectric layer 204 , a gate 206 and a top cap layer 208 sequentially from the substrate 200 . Wherein, the formation method of the memory unit 202 is, for example, forming a composite dielectric material layer, a conductive material layer, and an insulating material layer on the substrate 200 in sequence, and then patterning the above material layers by lithographic etching technology.

[0057] The composite dielectric layer 204 is, for example, composed of a bottom dielectric layer 204a, a charge trapping layer 204b, and a top dielectric layer 204c. The materia...

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Abstract

This invention relates to a method for manufacturing non-volatile storages, which first of all provides a substrate and forms a storage cell array composed of multiple first storage units and second storage units, then forms a source region and a drain region on the substrate at both sides of the array, and then forms a patternized first interlayer insulation layer on the substrate to form a first groove and a second groove, forms a conduction layer on the substrate and a source layer on the first groove and multiple leads on the second one and then forms a second interlayer insulation layer on the substrate and forms a conduction plug contacted with the drain region in the second and the first insulation layers and forms a bit line contacted with the conduction plug on the second insulation layer.

Description

technical field [0001] The present invention relates to a semiconductor memory component, and in particular to a nonvolatile memory and a manufacturing method thereof. Background technique [0002] Among all kinds of non-volatile memory products, it has the advantages of multiple data storage, reading and erasing, and the stored data will not disappear after power off Programmable read-only memory (EEPROM), has become a memory component widely used in personal computers and electronic equipment. [0003] A typical EEPROM is made of doped polysilicon (floating gate) and control gate (controlgate). In the conventional technology, a charge trapping layer is also used to replace the polysilicon floating gate, and the material of the charge trapping layer is, for example, silicon nitride. The silicon nitride charge-trapping layer usually has a layer of silicon oxide above and below, forming a silicon oxide / silicon nitride / silicon oxide (oxide-nitride-oxide, ONO for short) compo...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247H01L27/115
Inventor 魏鸿基毕嘉慧曾维中
Owner POWERCHIP SEMICON CORP