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Picture element structure and producing method thereof

A technology of pixel structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problems of reliability and cost increase, and achieve the best reliability and simple process

Active Publication Date: 2009-01-21
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the bump 170 is a photoresist material, and the photoresist material contains a solvent, the bump 170 may cause reliability problems.
In addition, the bump 170 will also cause an increase in cost

Method used

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  • Picture element structure and producing method thereof
  • Picture element structure and producing method thereof
  • Picture element structure and producing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] 2A to 2C are schematic diagrams of a method for manufacturing a pixel structure according to an embodiment of the present invention. Referring to FIG. 2A , the manufacturing method of the pixel structure in this embodiment includes the following steps. First, a substrate 210 is provided, and then a gate 220 is formed on the substrate 210 . More specifically, a first conductive layer (not shown) is formed on the substrate 210 first, and then a patterning process is performed on the first conductive layer to form a gate 220 . Then, a first patterned dielectric layer 230 is formed on the substrate 210 to cover the gate 220, and the first patterned dielectric layer 230 has a plurality of bumps 230a and at least one opening 230b, wherein the bumps 230a are configured on the substrate 210 exposed by the opening 230b. The bumps 230a may be arranged in random numbers or a predetermined specification. In more detail, a first dielectric layer (not shown) is formed on the subst...

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PUM

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Abstract

A pixel structure is prepared as arranging grid on base plate and patternized dielectric layer (PDL) on base plate and using PDL to cover said grid, arranging lugs at PDL on base plate exposed by an opening of PDL, setting semiconductor layer on PDL above grid, setting source electrode and drain electrode on semiconductor layer, setting reflection pixel electrode on PDL and using reflection pixel electrode to cover said lugs as well as electric-connecting reflection pixel electrode to drain electrode.

Description

technical field [0001] The present invention relates to a pixel structure and a manufacturing method thereof, and in particular to a pixel structure applied to a liquid crystal display and a manufacturing method thereof. Background technique [0002] Generally, thin film transistor liquid crystal displays can be classified into three types: transmissive, reflective, and semi-transmissive, semi-reflective. The classification is based on the utilization of the light source and the difference of the array substrate (array). Among them, the transmissive TFT-LCD mainly uses a backlight as a light source, and the pixel electrodes on the TFT array substrate are transparent electrodes to facilitate the light emitted by the backlight to penetrate. In addition, the reflective TFT-LCD mainly uses front-light or external light as the light source, and the pixel electrodes on the thin-film transistor array substrate are metal or other reflective electrodes with good reflective properties...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/84G02F1/1362
Inventor 李奕纬朱庆云黄资峰
Owner AU OPTRONICS CORP