Multi-core electric filling structure for large out light hole vertical cavity surface emitting semiconductor laser

Abstract

A multi - core electricity implanting structure of light outgoing hole vertical cavity surface transmitting semiconductor laser belongs to semiconductor laser technology field. Said invented multi - core electricity implanting structure is located high aluminum layer in Bragg reflection mirror, number of separated current injection zone uniformly distributed in the area enclosed by annular groove and two-sided oxide restricted zone, these separated current injection zone divided by plurality of cavity and surrounding oxide restricted zone, thereby avoiding or reducing adverse effect to device performance service life duo to increasing light outgoing aperture or adopting short burst driving for raising device power. The present invention can be used in semiconductor laser education, research and area of production.

Description

technical field [0001] The invention relates to an electric injection structure of a vertical cavity surface emitting semiconductor laser, belonging to the technical field of semiconductor laser devices. Background technique [0002] In the process of manufacturing a vertical cavity surface emitting semiconductor laser, see Figure 1, an annular groove 1 is etched on the edge of the mesa, and after oxidation, an oxide confinement region 2 is formed on the high aluminum layer in the Bragg reflector near both sides of the groove , and the middle part becomes the light exit hole 3, and the light exit hole 3 of the vertical cavity surface emitting semiconductor laser is also a current injection region. In order to increase the power, the method of enlarging the light exit aperture is generally adopted. Since the light exit aperture of the light exit hole 3 is larger than 10 microns, the carrier aggregation effect is likely to occur, and in order to obtain higher laser power, the...

AI Technical Summary

Problems solved by technology

For a vertical cavity surface-emitting semiconductor laser with a large light exit hole, the injection area of ​​the pulse current has a large cross-sectional area. Under the action of the skin effect, the current tends to the outside of the light exit hole 3, which causes the occurrence The uneven injection current intensity will further lead to the phenomenon of local overheating due to excessive local current outside the light exit hole, which finally shows that the light intensity outside the light exit hole is strong, and the light intensity near the center of the light exit hole is small or does not emit light. Performance and lifespan are very detrimental

It can be seen that, regardless of DC drive or pulse drive, there will be uneven injection current intensity in the vertical cavity semiconductor laser with large light exit hole

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