Self-offset high efficiency rectification circuit used for RF electron tag
A rectifier circuit and electronic label technology, applied to record carriers used in machines, converting irreversible AC power input to DC power output, instruments, etc. Rectification efficiency and the effect of reducing the turn-on threshold
Inactive Publication Date: 2009-02-04
SHANGHAI QUANRAY ELECTRONICS
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, the threshold of MOS devices is generally high, NMOS is about 0.7v, and PMOS is about 0.9v. If this kind of rectification device is used in a low-power RF electronic tag system, the rectification efficiency will be reduced, thereby shortening the longest working distance of the tag.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0027] Embodiment: Figure 5 shows a schematic diagram of a two-stage rectifier circuit with automatic bias. In Figure 5, Cp1 and Cp2 are radio frequency input coupling capacitors, CL1 and CL2 are energy storage capacitors, and MN1 and MN2 are N-type rectifiers. MOS tubes, MP1 and MP2 are P-type MOS tubes used for rectification, MB1-MB6 provide stable voltage bias for the gate of the rectifier tube, R1, MB7-MB11 form a bias current generation circuit. The rectifier tubes MN1 , MN2 , MP1 , MP2 are biased by the bias current generation circuit to reduce their conduction threshold, thereby improving the radio frequency rectification efficiency of the entire rectifier circuit.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
This invention can process automatic bias of MOS tube of integral current to lower integral current conductive voltage to improve radio frequency electron label integral current efficiency and to strengthen radio frequency electron label integral property.
Description
technical field [0001] The invention belongs to the field of integrated circuit design. Specifically relates to a self-bias high-efficiency rectification circuit for radio frequency electronic tags. technical background [0002] With the rapid development of microelectronics technology, CMOS technology has been able to manufacture chips used in microwave bands, and radio frequency circuits can be integrated into chips of large-scale digital circuits. Low-cost wireless systems manufactured with CMOS technology will open up wider application fields. Radio frequency tags are a very promising application field. [0003] When the barcode was launched in 1973, its inventor predicted that 25 years later, there would be a new technology to replace the barcode. Now, radio frequency tags have come to people. It is not only a simple replacement for barcodes, but also integrates the latest information technologies such as wireless communications, microelectronics, and the Internet, ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G06K19/077H02M7/25
Inventor 李强
Owner SHANGHAI QUANRAY ELECTRONICS
