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Image sensor having pinned floating diffusion diode

A technology of pixel sensor and photodiode, used in diodes, image communication, semiconductor devices, etc.

Inactive Publication Date: 2009-03-11
APTINA IMAGING CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The saturation point of region 16 limits the dynamic range of the pixel and the ability of the image sensor to capture intra-scene intensity variations under certain lighting conditions

Method used

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  • Image sensor having pinned floating diffusion diode
  • Image sensor having pinned floating diffusion diode
  • Image sensor having pinned floating diffusion diode

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Embodiment Construction

[0027] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and which illustrate by way of example specific embodiments in which the invention may be practiced. These embodiments have been described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that structural, logical, and other modifications may be made without departing from the spirit and scope of the invention. and electrical changes. The progression of process steps described is an exemplary embodiment of the invention; however, the order of the steps is not limited to that set forth herein and may be varied as known in the art, except for steps that must occur in a certain order.

[0028] The terms "wafer" and "substrate," as used herein, are understood to include silicon, silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technologies, doped and undo...

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Abstract

The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene intensity variation.

Description

technical field [0001] The present invention generally relates to methods and apparatus relating to imager pixel arrays. In particular, the invention relates to imagers having pixels with improved floating diffusion regions. Background technique [0002] Typically, a digital imager array includes a focal plane array of pixel cells, each of which cells includes a photoelectric conversion device, such as a grating, photoconductor, or photodiode. In one such imager, known as a CMOS imager, a readout circuit is connected to each pixel cell, which typically includes a source follower output transistor. A photoelectric conversion device converts photons into electrons, which are typically transferred to a charge storage region, which may be a floating diffusion region, connected to the gate of a source follower output transistor. A charge transfer device, such as a transistor, may be included for transferring charge from the photoelectric conversion device to the floating diffus...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H04N25/00
CPCH01L27/14609H01L27/1463H01L27/14643H01L27/14689H04N5/35527H04N25/575H04N25/59H01L27/146
Inventor 洪性权
Owner APTINA IMAGING CORP
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