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Non-volatile semiconductor memory and method of operating the same

A non-volatile storage and non-volatile technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, static memory, etc., can solve complex problems and achieve the effect of stable operation

Inactive Publication Date: 2009-05-27
崔雄林
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0049] Thus, a matrix consisting of multiple control gate lines spaced apart in each row requires complex circuitry in decoding the individual lines

Method used

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  • Non-volatile semiconductor memory and method of operating the same
  • Non-volatile semiconductor memory and method of operating the same
  • Non-volatile semiconductor memory and method of operating the same

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[0123] According to the first embodiment of the present invention, it is assumed that an NMOS transistor is formed on a p-type semiconductor substrate. However, it is also possible to form a PMOS transistor cell on an n-type semiconductor substrate, which is best realized by using a semiconductor material of the opposite polarity to that of an NMOS transistor.

[0124] Figure 3B Shown is a nonvolatile semiconductor memory matrix according to a first embodiment of the present invention, wherein, with Figure 3A The nonvolatile memory devices shown form a matrix as a unit.

[0125] In order to form a highly integrated matrix, the Figure 3A The circuit shown is based on a unit in which the nonvolatile memory is arranged in a matrix shape. Therefore, a nonvolatile memory matrix having a predetermined size can be configured.

[0126] More specifically, the matrix includes: a plurality of bit lines arranged in a column direction, a plurality of word lines arranged in a row dir...

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Abstract

The present invention discloses a non-volatile semiconductor memory device and a method of operating the same. More specifically, the present invention includes a semiconductor substrate having active and field regions, at least two non-volatile storage transistors each of which having a storage on the active region and a control gate at the storage, wherein at least two control gates are incorporated into a single control plate, and at least two selection transistors each of which corresponds to the non-volatile storage transistor, wherein each of the selection transistors connected to the corresponding non-volatile storage transistors for selecting the corresponding non-volatile storage transistors.

Description

technical field [0001] The present invention relates to semiconductor devices, and in particular to nonvolatile semiconductor memories and operating methods thereof. Background technique [0002] Semiconductor memory that can read / write digital data electrically is divided into: EEPROM and fast memory (hereinafter referred to as flash memory), among which, EEPROM can be programmed and erased with memory cells, and flash memory can be erased with only one unit for tens and hundreds byte data and data recorded in byte units. [0003] Conventional EEPROMs are widely used to rewrite data by using small data units. However, a conventional EEPROM cell includes a pair of transistors. Therefore it occupies a larger area. As a result, it is difficult for a conventional EEPROM to realize a large capacity. Furthermore, it is expensive to manufacture. [0004] The memory cell of the conventional flash memory including only one transistor can increase the size of the erase unit inst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/04G11C16/02H01L21/8247H01L27/115H01L29/788H01L29/792
CPCH01L27/11524H01L27/11521H01L27/115G11C16/0433H10B41/35H10B69/00H10B41/30G11C16/04
Inventor 崔雄林
Owner 崔雄林