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Image sensor

An image sensor and pixel technology, which is applied in the field of image sensors, can solve problems such as difficulties and the inability to reduce the number of pixels

Inactive Publication Date: 2009-06-17
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, even the related art 5 cannot reduce the number of pixels when reading the charge from the photodiode
Like Related Art 1, Related Art 5 finds difficulty in obtaining information corresponding to multiple pixels

Method used

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Examples

Experimental program
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Effect test

no. 1 example

[0040] FIG. 1 shows a CCD 100 according to a first embodiment of the present invention. As shown in FIG. 1 , the CCD 100 of the first embodiment includes a photodiode column 1 , a read gate 2T, storage control gates 2A and 2B, storage gates 3A and 3B, a CCD unit 4 , a control circuit 5 and an output amplifier 6 .

[0041] The photodiode column 1 has a plurality of photodiodes 7A and 7B arranged in a column along the first direction. Photodiodes 7A and 7B generate charges based on incident light. Here, in this embodiment, odd-numbered photodiodes and even-numbered photodiodes counted from the left side of FIG. 1 are referred to as photodiodes 7A and 7B, respectively.

[0042] Read gate 2T controls charge transfer between photodiode column 1 and storage gate 3 . If a high-level voltage (for example, a power supply voltage) is applied through the control circuit 5 , the read gate 2T is turned on, and charges are transferred from the photodiode column 1 to the storage gate 3 . ...

no. 2 example

[0072] FIG. 6 shows a CCD 200 according to a second embodiment of the present invention. The CCD 200 of the second embodiment is basically the same as the CCD 100 of the first embodiment. In addition to the components of the CCD 100 of the first embodiment, the CCD of the second embodiment includes reset gates 14A and 14B formed adjacent to the memory gate 3 , and a reset drain 15 formed adjacent to the reset gates 14A and 14B. The same elements as those of the first embodiment are denoted by the same reference numerals, and their descriptions are omitted here.

[0073] Reset gates 14A and 14B are formed adjacent to memory gates 3A and 3B, respectively. With the high-level voltage applied to the reset gates 14A and 14B, the memory gates 3A and 3B and the reset drain 15 become conductive. In the case where a low-level voltage is applied to the reset gates 14A and 14B, the memory gates 3A and 3B and the reset drain 15 are not turned on.

[0074] Reset drain 15 is formed adjac...

no. 3 example

[0082] FIG. 8 shows a CCD 300 according to a third embodiment of the present invention. The CCD 300 of the third embodiment is basically the same as the CCD 100 of the first embodiment. In the CCD 100 of the first embodiment, two photodiodes work as a pair. In contrast, in the CCD 300 of the third embodiment, three photodiodes are operated as a set. The same elements as those of the first embodiment are denoted by the same reference numerals, and their descriptions are omitted here.

[0083] Referring to FIG. 8, the layout of the CCD 300 of the third embodiment will be described in detail. Here, it is assumed that the charge transfer direction of the CCD unit 4 is the first direction. As shown in FIG. 9 , the photodiodes 7A, 7B, and 7C of the photodiode column 1 are arranged in a column along the first direction. When viewed from the left side of FIG. 9 , photodiodes 7A, 7B, and 7C are arranged alternately in this order.

[0084] The read gate 2T extends in the first dire...

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Abstract

An image sensor according to an embodiment of the invention includes: a plurality of pixels arranged in line; a reading gate adjacent to the plurality of pixels; a plurality of memory gates formed adjacent to the reading gate and corresponding to the plurality of pixels; a plurality of memory control gates corresponding to the memory gates; and a CCD accumulation gate common to the plurality of memory control gates.

Description

technical field [0001] The present invention relates to an image sensor. In particular, the present invention relates to an image sensor capable of outputting data obtained by changing the resolution of captured images. Background technique [0002] In recent years, a CCD (Charge Coupled Device) has been widely used as a contact image sensor (CIS) of a scanner. In such devices, the resolution of captured images is usually varied. The resolution is determined by the number of pixels of the CCD. For changing the resolution, the following methods have been employed: a method of processing data retrieved from the CCD and changing the resolution of the data, and a method of changing the resolution while retrieving data from the CCD. [0003] FIG. 16 shows a typical example of a conventional CCD (Related Art 1). The CCD of related art 1 includes: a plurality of photodiodes 101 arranged in a row, a plurality of CCD accumulation gates 102 arranged in a row for accumulating charg...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/148H01L23/522H04N1/028H04N25/00
CPCH01L27/14825H01L27/14806H01L27/14812
Inventor 纲井史郎
Owner RENESAS ELECTRONICS CORP
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