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Thin film fuse phase change cell with thermal isolation layer and manufacturing method

A thermal insulation and thin film technology, applied in electrical components, static memory, instruments, etc., can solve problems such as disturbing operation and reducing current heating effect

Active Publication Date: 2009-06-17
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conduction of heat away from the phase change material in the active region reduces the heating effect of the current and also interferes with the operation of the phase change material

Method used

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  • Thin film fuse phase change cell with thermal isolation layer and manufacturing method
  • Thin film fuse phase change cell with thermal isolation layer and manufacturing method
  • Thin film fuse phase change cell with thermal isolation layer and manufacturing method

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Embodiment Construction

[0032] The thin film fuse phase change memory cell of the present invention, the array formed by the memory cell and the method for manufacturing the memory cell, refer to Figure 1-16 And do a detailed description.

[0033] figure 1 Shows the basic structure of the memory cell 10, including a memory material bridge 11 located above the electrode layer, which includes a first electrode 12, a second electrode 13, and an insulating member 14 located between the first electrode 12 and the second electrode 13 . As shown in the figure, the first and second electrodes 12, 13 have upper surfaces 12a and 13a. Similarly, it also has an upper surface 14a. In this embodiment, the upper surfaces 12a, 13a, 14a of these structures in the electrode layer define a substantially flat upper surface of the electrode layer. In other embodiments, the upper surfaces 12a, 13a, and 14a are not on the same plane. For example, the insulating member 14 may extend to form an insulating wall between the ele...

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PUM

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Abstract

The invention discloses a memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode. A damascene patch crosses the insulating member aligned with the first and second electrodes, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided. The bridge comprises a active layer of phase change material having at least two solid phases at the first end and a material layer of heat insulating cover layer is on the memory material, wherein the said heat insulating cover layer has lower thermal conductivity than the electrical insulating material layer.

Description

Technical field [0001] The present invention relates to high-density memory devices using phase change memory materials, including chalcogenide-based materials and other materials, and to methods for manufacturing such devices. Background technique [0002] Storage materials based on phase change are widely used in reading and writing optical discs. These materials include at least two solid phases, including, for example, a mostly amorphous solid phase and a substantially crystalline solid phase. Laser pulses are used to read and write optical discs to switch between two phases and to read the optical properties of this material after the phase change. [0003] Such phase change memory materials, such as chalcogenides and similar materials, can change the crystal phase by applying a current whose amplitude is suitable for use in integrated circuits. Generally speaking, the characteristic of the amorphous state is that the resistance is higher than that of the crystalline state, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24G11C11/56
Inventor 陈士弘
Owner MACRONIX INT CO LTD