Unlock instant, AI-driven research and patent intelligence for your innovation.

Screw inductive element having multiplex conductor structure

A spiral inductance and wire technology, applied in the field of built-in inductance components in chips, can solve the problem of reducing the quality factor, and achieve the effect of maintaining the frequency range, reducing the conductor loss, and improving the quality factor of the inductance

Active Publication Date: 2009-07-08
VIA TECH INC
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, compared with the inductance element of the general radio frequency circuit, the coil thickness of the inductance element in the system on chip is thinner, which reduces the quality factor (Q value)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Screw inductive element having multiplex conductor structure
  • Screw inductive element having multiplex conductor structure
  • Screw inductive element having multiplex conductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The spiral inductance element with multiple wire structure provided by the embodiment of the present invention includes a multi-turn spiral wire. The multi-turn spiral wire has a first end and a second end at the outermost turn and the innermost turn respectively. If the first end of the outermost wire part is grounded, there will be a single-turn helical wire inside the innermost wire part, which is electrically connected in parallel with the outermost wire part. On the other hand, if the second end of the innermost wire part is grounded, there will be a single-turn spiral wire outside the outermost wire part, and electrically connected in parallel with the innermost wire part. That is, the positions of the ground end of the multi-turn spiral conductor and the single-turn spiral conductor are respectively located inside and outside the multi-turn spiral conductor, or are respectively located outside and inside the multi-turn spiral conductor.

[0021] The following fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a spiral inductance element with a multi-turn structure, which includes: a multi-turn first spiral wire and at least one single-turn second spiral wire. The first spiral wire is disposed in an insulating layer on a base, wherein the outermost turn of the first spiral wire has a first end, and the innermost turn of the wire has a second end, and one of the ends is connected to a grounding end . The second spiral wire is disposed in the insulating layer and parallel to the first spiral wire, wherein the second spiral wire is connected in parallel with the turn of the wire connected to the ground terminal to form a multi-wire structure. The spiral inductance element with multiple wires of the present invention can reduce the conductor loss and improve the inductance quality factor while maintaining the usable frequency range.

Description

technical field [0001] The present invention relates to a semiconductor integrated circuit, in particular to an on-chip inductor with a multi-wire structure. Background technique [0002] Many digital and analog components and circuits have been successfully used in semiconductor integrated circuits. The above components include passive components such as resistors, capacitors or inductors. A typical semiconductor integrated circuit includes a silicon substrate. More than one dielectric layer is disposed on the base, and more than one metal layer is disposed in the dielectric layer. These metal layers can form chip-on-chip components, such as chip-on-chip inductors, through known semiconductor process technology. [0003] Traditionally, on-chip inductors are formed on a substrate and used in radio frequency band IC design. Please refer to Figure 1A and Figure 1B ,in Figure 1A A schematic plan view of a known on-chip inductance element with a planar spiral structure i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/02H01L27/02H01F17/00
Inventor 李胜源
Owner VIA TECH INC