Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber
An exhaust method and transfer chamber technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., to achieve the effects of preventing particles from adhering to the substrate, preventing defects, and slowing gas flow
Inactive Publication Date: 2009-07-15
TOKYO ELECTRON LTD
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Problems solved by technology
Even if there are no particles that become nuclei in the chamber, various ions in the gas will become condensation nuclei, or water molecules will condense and grow larger. As long as the chamber contains moisture, this condensation of water will sometimes occur. and solidification phenomenon, and will cause serious problems
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[0057] Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0058] First, a substrate processing system according to an embodiment of the present invention will be described.
[0059] figure 1 It is a cross-sectional view of a schematic structure of a substrate processing system according to an embodiment of the present invention.
[0060] exist figure 1 Among them, the substrate processing system 1 includes: a processing module (Process Module) for performing plasma processing such as RIE (Reactive Ion Etching: Reactive Ion Etching) processing or ashing processing on a semiconductor wafer (hereinafter referred to as "wafer") W as a substrate. ) (hereinafter referred to as "P / M") 2; Atmospheric transfer device 3 for taking out wafer W from Front Opening Unified Pod (Front Opening Unified Pod: FOUP) 5 which is a container for storing wafer W and a load as an intermediate transfer chamber that is installed between the atmospher...
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An intermediate transfer chamber that can prevent formation of defects in substrates. The intermediate transfer chamber is provided between a loader module being in a first environment where the interior thereof is at a first pressure and contains moisture, and a chamber of a process module being in a second environment where the interior thereof is at a second pressure lower than the first pressure. The intermediate transfer chamber comprises a transfer arm comprising a pick that bidirectionally transfers a substrate between the loader module and the chamber and supports the substrate, a load-lock module exhaust system that exhausts the interior of the intermediate transfer chamber so as to reduce pressure in the intermediate transfer chamber from the first pressure to the second pressure, and a plate-like member that controls the conductance of exhaust on at least a principal surface of the substrate opposite to the pick when the interior of the intermediate transfer chamber is exhausted.
Description
technical field [0001] The invention relates to an intermediate transfer chamber, a substrate processing system and an exhaust method for the intermediate transfer chamber, in particular to an intermediate transfer chamber for vacuum exhaust during substrate transfer. Background technique [0002] A substrate processing system that performs plasma processing on wafers as substrates includes: a processing module that accommodates wafers and performs plasma processing; a load lock module that serves as an intermediate transfer chamber for loading wafers into the processing module; and a container for accommodating a plurality of wafers. The load module that removes the wafer from the load lock module. [0003] Normally, the load lock module of a substrate processing system has the following functions: After receiving wafers under atmospheric pressure, after the chamber is evacuated to a specified pressure, the gate valve on the side of the processing module is opened, and the ...
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IPC IPC(8): H01L21/02H01L21/3065
CPCH01L21/67201H01L21/67276H01L21/67742H01L21/67769
Inventor 守屋刚中山博之近藤圭祐冈宽树
Owner TOKYO ELECTRON LTD