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Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction

A magnetic tunnel junction and logic element technology, applied in the field of magnetic logic, can solve the problems of unfavorable miniaturization and integration of magnetic logic

Active Publication Date: 2009-07-15
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the defect that existing magnetic logic is unfavorable for miniaturization and integration, thereby providing a kind of small-scale logic element based on double-barrier magnetic tunnel junction with multiple logic functions and capable of logic processing

Method used

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  • Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction
  • Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction
  • Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction

Examples

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Effect test

Embodiment 1

[0041] Such as image 3As shown, the first magnetic logic element core structure based on the double-barrier magnetic tunnel junction provided by the present invention includes the following five layers: three layers of ferromagnetic layers FM1, FM2 and FM3, and two tunnels in the middle of the three layers of ferromagnetic layers Barrier layers I1 and I2. The magnetic layers FM1 and FM3 are composed of "hard magnetic layer" CoFe with a large coercive force, and its thickness is 3nm. The magnetic layer FM2 is composed of a "soft magnetic layer" NiFe with a small coercive force of 10nm; the tunnel barrier layer is composed of 1.0nm Al 2 o 3 constitute.

[0042] Since the material composition and thickness of the magnetic layers FM1 and FM3 are the same, the switching fields of the two layers are the same, and the magnetization state of the double-barrier tunnel junction at this time is similar to that of the single-barrier tunnel junction. In this scheme, the input lines A,...

Embodiment 2

[0050] Such as Figure 4 As shown, the second magnetic logic element core structure based on the double-barrier magnetic tunnel junction provided by the present invention includes the following five layers: three layers of ferromagnetic layers FM1, FM2 and FM3, and sandwiching two tunnels in the middle of the three layers of ferromagnetic layers Barrier layers I1 and I2. The magnetic layers FM1, FM2 and FM3 are made of 4nm CoFeSiB soft magnetic material with high spin polarizability. Among them, FM1 and FM3 are pinned by 12nm antiferromagnetic material IrMn, so that the magnetization direction of the two layers is relatively fixed, while the magnetization direction of FM2 can be reversed in a small magnetic field, which is the free layer. Tunnel barriers I1 and I2 are made of AlN with a thickness of 0.8nm.

[0051] The operation mode of the magnetic logic element based on this structure is similar to Embodiment 1.

Embodiment 3

[0053] Such as Figure 5 As shown, the core structure of the third magnetic logic element based on the double-barrier magnetic tunnel junction provided by the present invention includes: a lower antiferromagnetic layer AFM1; a lower magnetic layer composed of FM11 / Ru / FM1 artificial antiferromagnetic coupling structure layer; an upper magnetic layer composed of FM3 / Ru / FM31 artificial antiferromagnetic coupling structure; and two tunnel barrier layers I1 and I2 sandwiched between three ferromagnetic layers (FM1, FM2, FM3); an upper antiferromagnetic layer Magnetic layer AFM2. FM1, FM2 and FM3 are composed of 4nm CoFeB soft magnetic material with high spin polarizability, FM11 and FM31 are composed of 2nm CoFe material, and the thickness of Ru is 0.8nm. Among them, FM1 and FM3 are artificially antiferromagnetically pinned by antiferromagnetic materials PtMn and CoFe(2nm) / Ru(0.8nm) / CoFeB(4nm), the magnetization direction of these two layers is relatively fixed, while the magnetiz...

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Abstract

The invention relates to a logic element based on a double-barrier magnetic tunnel junction. The logic element includes four input signal lines, one output signal line and a tunnel junction unit; the current intensity flowing in each input line is the same, and the "0 " and "1" are assigned to them, and the combination of input signals A, B, C, and D is used to determine the magnetization direction of the magnetic layer in the tunnel junction, and the magnitude of the magnetoresistance effect passing through the double barrier magnetic tunnel junction is used as the output signal; It is characterized in that the tunnel junction unit is a double barrier magnetic tunnel junction unit, comprising: a lower magnetic layer, a first tunnel barrier layer, a middle magnetic layer, a second tunnel barrier layer and an upper magnetic layer. The present invention also relates to a magnetic logic element array in which any plurality of magnetic logic elements are arranged in an array, and logic input signals or readout currents flow through the magnetic logic elements. The invention has the advantages of miniaturization and high-density integration of logic circuits, which is beneficial to industrialization.

Description

technical field [0001] The invention belongs to the field of magnetic logic, and in particular relates to a digital storage technology utilizing magnetic random access storage, a logic element based on a double-barrier magnetic tunnel junction provided for a logic device and a logic circuit, and an arrayed magnetic array of logic elements. Background technique [0002] Current transistor-based integrated circuits, computing operations, rely primarily on the charge of electrons. However, since the discovery of the giant magnetoresistance effect in the 1980s, spintronics has attracted widespread attention. People want to manipulate the spin of electrons to design and manufacture new devices. Several research groups have begun exploring a whole new class of processors, proposing that magnetic memory cells could also be designed to perform computations. Through the two steps of selection and execution of logical operations, these devices can be either programmable logic device...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08G11C11/16H03K19/18H10N50/10
Inventor 曾中明魏红祥姜丽仙韩秀峰彭子龙詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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