Method for measuring silicon solar cell junction depth

Abstract

The invention relates to a measuring method for a silicon solar cell junction depth, which belongs to field of silicon solar cell performance parameter measurement method. The measuring method measures and calculates the silicon solar cell junction depth by employing anode oxidation method and differential weighing calculation method, and includes steps: measuring weight of uneroded phosphorus diffused layer silicon substrate namely cell sheet and square resistance, oxidizing surface of the silicon substrate by the anode oxidation method to obtain a oxidation layer; etching the generated oxidation layer by hydrofluoric acid and measuring the square resistance, repeating the upper step until the square resistance becomes smaller, weighting the silicon substrate. Difference value of the weight and the weight measured at beginning is weight of the diffused layer, average depth of the diffused layer namely the cell junction depth can be obtained through dividing the weight difference value by density of the diffused layer and area of the eroded diffused layer.

Description

technical field [0001] The invention relates to a method for measuring the junction depth of silicon solar cells, belonging to the technical field of measurement methods for performance parameters of silicon solar cells. Background technique [0002] In today's society where energy is gradually scarce, people urgently need to find a renewable energy to replace non-renewable energy. As we all know, the sun gives the earth endless heat, so people point their targets at the sun. [0003] For the production of silicon solar cells, the p-n junction is the "heart" of the battery. The reason why solar cells can generate electricity is to use the electrostatic field of the p-n junction to separate electrons and holes. The electrons are concentrated on one side, and the holes are concentrated on the other side. On the one hand, so as to achieve the purpose of power generation, so the quality of the p-n junction will directly affect the performance of the solar cell. In the producti...

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Problems solved by technology

[0006] During the diffusion process, the PN junction of ordinary chips is horizontal and the chip surface is polished, but for silicon solar cells, phosphorus atoms diffuse into the silicon chip from the side of the pyramid, which causes certain difficulties for measurement. Based on these characteristics, it is necessary to find a new method to measure the junction depth

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