Method for measuring silicon solar cell junction depth

A technology of silicon solar cells and measurement methods, applied in semiconductor/solid-state device testing/measurement, circuits, electrical components, etc., can solve problems such as measurement difficulties

Inactive Publication Date: 2008-10-08
SHANXI JINGDU SOLAR ENERGY POWER
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] During the diffusion process, the PN junction of ordinary chips is horizontal and the chip surface is polished, but for silicon solar cells, phosphorus atoms diffuse into the silic

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for measuring silicon solar cell junction depth
  • Method for measuring silicon solar cell junction depth
  • Method for measuring silicon solar cell junction depth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The steps of the method for measuring the junction depth of the silicon solar cell in this embodiment are as follows:

[0020] (1) The solar cell of the silicon solar cell, that is, the silicon substrate with a phosphorus diffusion layer, is first subjected to ultrasonic cleaning, and then hydrofluoric acid is used to etch away the original oxide layer remaining during phosphorus diffusion; at this time, the phosphorus diffusion layer is measured The weight of the silicon substrate or the cell M 1 And its sheet resistance;

[0021] (2) Then use anodization to oxidize the surface of the silicon substrate; see for the oxidation device figure 1; Figure 1 shows A schematic diagram of an apparatus for oxidizing the surface of the silicon substrate by an anodic oxidation method. Using copper as the cathode, the silicon substrate, that is, the battery as the anode, the electrolyte is sodium nitrate solution, and the anodic oxidation reaction is carried out under the condition of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a measuring method for a silicon solar cell junction depth, which belongs to field of silicon solar cell performance parameter measurement method. The measuring method measures and calculates the silicon solar cell junction depth by employing anode oxidation method and differential weighing calculation method, and includes steps: measuring weight of uneroded phosphorus diffused layer silicon substrate namely cell sheet and square resistance, oxidizing surface of the silicon substrate by the anode oxidation method to obtain a oxidation layer; etching the generated oxidation layer by hydrofluoric acid and measuring the square resistance, repeating the upper step until the square resistance becomes smaller, weighting the silicon substrate. Difference value of the weight and the weight measured at beginning is weight of the diffused layer, average depth of the diffused layer namely the cell junction depth can be obtained through dividing the weight difference value by density of the diffused layer and area of the eroded diffused layer.

Description

Technical field [0001] The invention relates to a method for measuring the junction depth of a silicon solar cell, belonging to the technical field of methods for measuring performance parameters of a silicon solar cell. Background technique [0002] In today's society where energy is gradually scarce, people urgently need to find a renewable energy to replace non-renewable energy. As we all know, the sun gives the earth endless amounts of heat, so people point to the sun. [0003] For the production of silicon solar cells, the pn junction is the "heart" of the battery. The reason why solar cells can generate electricity is to use the electrostatic field of the pn junction to separate the pairs of electrons and holes. The electrons are concentrated on one side and the holes are concentrated on the other. On the one hand, so as to achieve the purpose of generating electricity, so the quality of the pn junction will directly affect the performance of the solar cell. In the producti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18H01L21/66
CPCY02P70/50
Inventor 吴伟张磊马忠权史伟民
Owner SHANXI JINGDU SOLAR ENERGY POWER
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap