Semiconductor light-emitting device and board mounted with semiconductor light emitting device
A technology of light-emitting elements and element substrates, which is applied in the direction of semiconductor devices, electrical components, and electric solid-state devices, etc., can solve problems such as uncertainty, and achieve the effects of improving reliability, improving uniformity, and suppressing poor bonding
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no. 2 Embodiment approach
[0096] Next, use Figure 7 The schematic bottom view of the LED chip 1c shown in , describes the LED chip 1c as an example of the semiconductor light emitting element according to the second embodiment of the present invention. Such as Figure 7 As shown, in the LED chip 1c, two bump forming portions 133 are provided in the n electrode layer 131, and n bumps 141a and 141b are formed in the two bump forming portions 133, respectively. That is, in the LED chip 1 of the first embodiment described above, only one n-protrusion 141 is provided, but in the LED chip 1c of the second embodiment, one more n-protrusion is provided. In addition, other constitutions in the LED chip 1c are the same as figure 1 as well as figure 2 The LED chip 1 of the above-mentioned first embodiment shown in the figure is the same, and in the following description, the same components are given the same reference numerals, and the description thereof will be omitted.
[0097] Such as Figure 7 As sh...
no. 3 Embodiment approach
[0104] Next, use Figure 8 and Figure 9 , the LED chip 51 as an example of the semiconductor light emitting element according to the third embodiment of the present invention will be described. in addition, Figure 9 is a schematic partial bottom view of the LED chip 51, Figure 8 for Figure 9 A schematic partial cross-sectional view of the C-C line in the chip 51.
[0105] Such as Figure 8 with Figure 9 As shown, the LED chip 51 of the third embodiment differs from the LED chip 1 of the first embodiment in that the p-electrode layer ( corner side p-electrode layer), and the p-electrode layer (adjacent-side p-electrode layer) on which the p-protrusions p142b adjacent to the p-protrusion 142a of the corner P1 are formed are connected to each other as a common integral p electrode layer 132A. In addition, since other configurations are the same as those of the LED chip 1 of the first embodiment, the same reference numerals are assigned to the same components, and des...
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