Electroluminescent device and method for production thereof

Abstract

The invention discloses an electroluminescence device, which comprises a conductive base plate, a reflecting layer, a nano-pattern transparent conductive layer, at least a luminescent diode element, a first contact electrode and a second contact electrode. Among which, the reflecting layer is arranged on the conductive base plate; the nano-pattern transparent conductive layer is arranged on the reflecting layer; the luminescent diode element is arranged on the nano-pattern transparent conductive layer; the luminescent diode comprises a first semiconductor layer, a luminescent layer and a second semiconductor layer one by one; the second semiconductor layer is arranged on the nano-pattern transparent conductive layer and the reflecting layer; the first contact electrode is arranged on one side of the first semiconductor layer; the second contact electrode is arranged on one side of the conductive base plate.

Description

technical field [0001] The invention relates to an electroluminescent device and a manufacturing method thereof, in particular to an electroluminescent device with high performance and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a kind of luminescent light-emitting element, which utilizes the energy released by the combination of electrons and holes in a semiconductor material, and releases it in the form of light. Depending on the material used, it can emit monochromatic light of different wavelengths, and can be mainly divided into two types: visible light-emitting diodes and invisible light (infrared) light-emitting diodes. Compared with traditional light bulbs, light-emitting diodes are energy-saving. , shock resistance and fast flashing speed, etc., so it has become an indispensable important component in daily life. [0003] Please refer to figure 1 As shown, a light emitting diode device 1 in th...

AI Technical Summary

Problems solved by technology

[0004] like figure 1 As shown, the first contact electrode 104 is formed on the first semiconductor layer 101, and the second contact electrode 105 is formed on the transparent conductive layer 13, that is, the first contact electrode 104 and the second contact electrode 105 are arranged on the same surface relative to the transparent substrate 11. On the other hand, in the process of manufacturing the light emitting diode device with this structure, part of the light emitting diode element 10 must be removed by using, for example, an etching technique, such as figure 1 The area A shown is to provide the setting of the second contact electrode 105. However, this step not only increases the complexity of the process, but also may cause the light emitting diode element 10 to have an uneven surface due to poor control of the etching process. The phenomenon of leakage current is generated, thereby reducing the process yield of the light emitting diode device 1

[0005] In addition, in the prior art, the epitaxial substrate is generally used as the transparent substrate, and the transparent adhesive layer is composed of an organic adhesive material. Since the thermal conductivity of the epitaxial substrate and the organic adhesive material is low, it cannot provide a better heat dissipation path for the LED element 10, which makes the operation difficult. The light-emitting diode device 1 in the present invention has problems such as heat accumulation and difficulty of dissipating, which in turn affects the luminous efficacy of the light-emitting diode device 1

Images