Method for modeling electrics statistical model of mixed propagation type MOS transistor

Abstract

A modeling method of a mixed propagation typed MOS transistor electricity statistical model includes that: the working procedure of a forward propagation method is adopted, which has a step S1 which determines the standard deviation of three model parameters; a backward propagation method is also adopted, which has a step S5 which selects four model parameters and carries out numerical differencemethod sensitivity analysis to the difference of the model parameter and the technique standard. The mixed propagation typed modeling method respectively takes the advantages of the forward propagation modeling method and the backward propagation modeling method and improves the developing efficiency and practicability of MOS transistor electricity statistical model.

Description

technical field

[0001] The invention relates to a modeling method of a hybrid propagating MOS transistor electrical statistical model. Specifically, the present invention relates to a modeling method of an electrical statistical model of a MOS transistor using a forward propagation method and a backward propagation method in combination. Background technique

[0002] At present, in the manufacturing process of integrated circuit products, there are generally hundreds of process links. Because each process is affected by statistical uncertainty factors, even for products with the same design, its circuit performance will vary due to different manufacturing workshops, different batches of processes, different wafers and different chip locations. corresponding changes occur.

[0003] Therefore, when building device models for integrated circuit designers, the influence of these uncertain statistical factors should be fully considered, that is, corresponding device electrical ...

Images