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Method for modeling electrics statistical model of mixed propagation type MOS transistor

A technology of MOS transistors and modeling methods, which is applied in computing, electrical digital data processing, special data processing applications, etc., can solve problems affecting the efficiency and practicability of electrical statistical models, so as to improve efficiency and accuracy, improve efficiency, The effect of good simulation effect

Active Publication Date: 2010-02-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The above two methods have their own advantages and disadvantages, but because they are mostly used independently of each other in actual work, it is difficult to give full play to the respective advantages of the two methods at the same time, thus greatly affecting the efficiency and practicability of establishing electrical statistical models

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  • Method for modeling electrics statistical model of mixed propagation type MOS transistor
  • Method for modeling electrics statistical model of mixed propagation type MOS transistor

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Embodiment approach 1

[0021] The modeling method of the hybrid propagating MOS transistor electrical statistical model of the present invention is characterized in that the modeling method includes the process of using the forward propagation method of determining the model deviation to simulate until the obtained process deviation basically conforms to the measured process deviation, and adopting The procedure of the back-propagation method for inferring model deviations back from measurable process deviations.

[0022] This embodiment overcomes the disadvantage of using one propagation method alone, but uses a modeling method in which two propagation modes complement each other, effectively improving the modeling speed and accuracy.

Embodiment approach 2

[0024] The modeling method of the hybrid propagating MOS transistor electrical statistical model in Embodiment 2 relates to the modeling method of the hybrid propagating MOS transistor electrical statistical model in Embodiment 1. When selecting statistical characteristic parameters, the process of forward propagation method is adopted Among them, the following MOS transistor BSIM4 model parameters are selected, that is, the selected three model parameters are the oxide layer thickness Tox in the industry standard MOS BSIM4 model, the block resistance Rsh of the source and drain contacts, and the threshold voltage Vth of the device. .

[0025] The main advantage of this method is that the modeling process is straightforward and can effectively improve the modeling efficiency.

Embodiment approach 3

[0027] The modeling method of the hybrid propagation MOS transistor electrical statistical model of Embodiment 3 relates to the modeling method of the hybrid propagation MOS transistor electrical statistical model of Embodiment 2. When selecting statistical characteristic parameters, the backward propagation method is used to select The following MOS transistor BSIM4 model parameters, that is, the selected 4 model parameters are the change X1 of the channel length caused by the process in the industry standard MOS BSIM4 model, the change Xw of the channel width caused by the process, and the threshold voltage. The short channel effect coefficient k1 and the narrow channel effect coefficient k3 of the threshold voltage.

[0028] The main advantage of this method is that the determined standard deviation of model parameters has considerable reliability, so the accuracy of modeling can be greatly improved.

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Abstract

A modeling method of a mixed propagation typed MOS transistor electricity statistical model includes that: the working procedure of a forward propagation method is adopted, which has a step S1 which determines the standard deviation of three model parameters; a backward propagation method is also adopted, which has a step S5 which selects four model parameters and carries out numerical differencemethod sensitivity analysis to the difference of the model parameter and the technique standard. The mixed propagation typed modeling method respectively takes the advantages of the forward propagation modeling method and the backward propagation modeling method and improves the developing efficiency and practicability of MOS transistor electricity statistical model.

Description

technical field [0001] The invention relates to a modeling method of a hybrid propagating MOS transistor electrical statistical model. Specifically, the present invention relates to a modeling method of an electrical statistical model of a MOS transistor using a forward propagation method and a backward propagation method in combination. Background technique [0002] At present, in the manufacturing process of integrated circuit products, there are generally hundreds of process links. Because each process is affected by statistical uncertainty factors, even for products with the same design, its circuit performance will vary due to different manufacturing workshops, different batches of processes, different wafers and different chip locations. corresponding changes occur. [0003] Therefore, when building device models for integrated circuit designers, the influence of these uncertain statistical factors should be fully considered, that is, corresponding device electrical ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 周天舒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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