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P-channel high power semiconductor constant-current diode and manufacturing method thereof

A technology of constant current diode and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor device, circuit, etc., can solve the problems of low current, power, and inability to directly drive loads, etc.

Inactive Publication Date: 2011-11-09
GUIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the current and power are too small, it cannot directly drive the load

Method used

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  • P-channel high power semiconductor constant-current diode and manufacturing method thereof
  • P-channel high power semiconductor constant-current diode and manufacturing method thereof
  • P-channel high power semiconductor constant-current diode and manufacturing method thereof

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Embodiment Construction

[0010] Embodiment of the present invention: diffuse a P-type semiconductor region (4) and a P-type semiconductor region (3) on the N-type semiconductor substrate (2), the P-type semiconductor region (4) and the P-type semiconductor region (3) ) are connected by a metal electrode (7); N is diffused on the P-type semiconductor region (4) + Type semiconductor region (6) forms the gate of P-type channel junction field effect transistor JFET, uses P-type semiconductor region (4) as P-type channel junction field effect transistor JFET; N-type semiconductor substrate (2) , P-type semiconductor region (4) and N + The P-type semiconductor region (6) is connected by a metal electrode (8) to form a small current constant current source; N is diffused on the P-type semiconductor region (3). + type semiconductor (5), N + The N-type semiconductor (5) is connected with a metal electrode as a negative pole; the N-type semiconductor substrate (2) is connected with a metal electrode (1) as a ...

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PUM

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Abstract

This invention discloses a P-channel high-power semiconductor constant current diode and its manufacturing method, which takes JFET as the small constant current source to provide the constant base current to the bipolar transistor of current expansion, and forms a major constant current through proportional (linear) enlargement (expansion). The characteristic of this invention is to realize the constant current though the physical process of semiconductor structure, and not the technology of integrated circuit and electronic module (component). The invention has the function of using the semiconductor physical property to realize constant current circuit, and the merit of using the current expansion method to directly drive the load by constant current.

Description

technical field [0001] The invention relates to a P-channel high-power semiconductor constant-current diode and a manufacturing method thereof, which utilize the physical process of a semiconductor structure to realize constant-current characteristics, and belong to the technical field of two-terminal semiconductor devices. Background technique [0002] In the prior art, the constant current source is a technology commonly used in electronic equipment and devices, and is generally realized by electronic modules or integrated circuits. A constant current diode is a semiconductor device that realizes a constant current source. At present, the international and domestic constant current diodes are usually products with low current and low power (output current: 0.5mA-10mA;), which are mainly used for setting the reference current in electronic circuits. Because the current and power are too small, it cannot directly drive the load. Contents of the invention [0003] The obj...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L21/329
Inventor 刘桥
Owner GUIZHOU UNIV