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Plasma processing apparatus and plasma processing method

A plasma and processing device technology, applied in the field of plasma processing devices, can solve problems such as lack of mechanical strength, film peeling, etc., and achieve the effect of reliable hardening treatment and simple structure

Inactive Publication Date: 2007-08-22
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Generally, since the mechanical strength of the porous Low-k film is insufficient, when forming the Low-k film by embedding Cu after forming it, and then planarizing it by CMP, film peeling may occur

Method used

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  • Plasma processing apparatus and plasma processing method
  • Plasma processing apparatus and plasma processing method
  • Plasma processing apparatus and plasma processing method

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Embodiment Construction

[0030] Next, preferred embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view of an example of a plasma processing apparatus according to an embodiment of the present invention. This plasma processing device utilizes the RLSA (Radial Line Slot Antenna: Radial Slot Antenna) plasma generation technology in which microwaves are introduced into the processing chamber by a planar antenna with several slits to generate plasma, and can generate microwaves with high density and low electron temperature. plasma.

[0031] The plasma processing apparatus 100 can perform plasma processing without damage to the base film at a low temperature of 500 degrees or less, and has excellent plasma uniformity, which can be compared with the plasma processing apparatus of the ICP method or the parallel plate method. Also favorably the uniformity of the workmanship. Therefore, the plasma processing apparatus 100 is suitable ...

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Abstract

In a plasma processing apparatus (100), an upper side plate (60) and a lower side plate (61) are provided on an upper part of a susceptor (2). The upper side plate (60) and the lower side plate (61) are composed of a heat resistant insulator, such as quartz, are separately arranged in parallel, for instance, at an interval of 5mm, and are provided with a plurality of through holes (60a or 61a). The through holes are formed at different positions so that the through holes (61a) of the lower side plate (61) and the through holes (60a) of the uppers side plate (60) do not overlap one another when the two plates are placed one over another.

Description

technical field [0001] The present invention relates to a plasma processing apparatus for processing a substrate to be processed such as a semiconductor substrate using plasma. Background technique [0002] In recent years, in high-speed logic devices, in order to reduce the parasitic capacitance between wirings, the low dielectric constant (Low-k) of the interlayer insulating film has been developed. Porous materials with large porosity are being used in ultra-LSI devices, especially Low-k films below the 65nm technology node. Generally, since the porous Low-k film is lacking in mechanical strength, when the Low-k film is formed by embedding Cu and then planarized by CMP, film peeling may occur. Therefore, it is necessary to perform curing treatment (curing) of the Low-k film in advance, for example, curing by heat treatment, UV treatment, electron beam treatment or the like. In addition, as hardening treatment by plasma, a method of plasma-processing a Low-k film using a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/31H01L21/316
CPCH01L21/0234H01J37/3244H01J37/32422H01L21/3122H01L21/02274C23C16/56H01L21/3127H01L21/02216C23C16/54C23C16/5096H01L21/31633H01L21/02126H01L21/31695H01L21/02203H01L21/3065
Inventor 井出真司佐佐木胜
Owner TOKYO ELECTRON LTD