Thin film transistor and its manufacturing method
A thin-film transistor and thin-film technology, used in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as deterioration of processing accuracy and low etching resistance
Inactive Publication Date: 2010-10-13
CASIO COMPUTER CO LTD
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Problems solved by technology
However, in the above-mentioned manufacturing method, there is such a problem that zinc oxide is easily dissolved in acid and alkali and its etching resistance is extremely low, thus causing damage to the ohmic contact layer and the ZnO semiconductor thin film formed on the device region in the subsequent process. The relatively large side etching in the
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A thin film transistor of the present invention includes a semiconductor thin film ( 8 ); a gate insulating film ( 7 ) formed on one surface of the semiconductor thin film ( 8 ); a gate electrode ( 6 ) formed to be opposite to the semiconductor thin film ( 8 ) through the gate insulating film ( 7 ); a source electrode ( 15 ) and a drain electrode ( 16 ) electrically connected to the semiconductorthin film ( 8 ); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film ( 9 ) formed on a peripheral portion corresponding to at least thesource region and the drain region of the semiconductor thin film ( 8 ), and having a contact hole ( 10, 11 ) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode ( 15 ) and the drain electrode ( 16 ) are connected to the semiconductor thin film ( 8 ) through the contact hole ( 10, 11 ).
Description
technical field The invention relates to a thin film transistor with an etching protection film and a manufacturing method thereof. Background technique Unexamined Japanese Patent Application KOKAI Publication H5-67786 discloses a thin film transistor structure used as a switching element of an active matrix liquid crystal display device. The thin film transistor includes a gate electrode formed on an upper surface of an insulating substrate, a gate insulating film formed on an upper surface of an insulating film including the gate electrode, and a gate insulating film formed on an upper surface of the gate insulating film on the gate electrode. Intrinsic amorphous silicon semiconductor thin film, a channel protective film formed on the central portion of the thin upper surface of the semiconductor film, formed on both sides of the upper surface of the channel protective film and on the upper surface of the semiconductor thin film on both sides thereof n-type amorphous sili...
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IPC IPC(8): H01L29/45H01L29/417H01L29/786H01L21/336
Inventor 石井裕满保刈一志吉田基彦山口郁博
Owner CASIO COMPUTER CO LTD