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Semiconductor doping using substrate tilting

A substrate and dopant technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, discharge tubes, etc., can solve problems such as the operation of transistors 100

Inactive Publication Date: 2007-10-24
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the distance (d) can be estimated using the equation d = h tan(θ), it creates an undesired undoped region established by the distance (d), which can cause the fabricated transistor 100 running problems in

Method used

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  • Semiconductor doping using substrate tilting
  • Semiconductor doping using substrate tilting
  • Semiconductor doping using substrate tilting

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Embodiment Construction

[0015] [0015] The present invention is based in part on the recognition that beam incidence angle errors generally have different effects on vertical transistors located on a semiconductor wafer than they do on similar horizontal transistors located on the same semiconductor wafer. FIG. 2 shows a diagram 200 illustrating the effect of beam incidence angle error on the drive current of an n-channel metal-oxide-semiconductor (MOS) device for vertical and horizontal transistors on the same wafer. As the beam incident angle error increases from about -0.5 degrees to about 3.0 degrees, the respective drive currents of the vertical and horizontal transistors are affected differently. Specifically, in the example of FIG. 2, the horizontal transistors are significantly affected by beam incidence angle errors, while the vertical transistors are not. The opposite effect can occur if the beam incidence angle error is in a direction perpendicular to the situation given in the example of F...

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Abstract

The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate ( 310 ) located on or over an implant platen ( 305 ) about an axis in a first direction with respect to an implant source ( 320 ) and implanting a portion of an implant dose within the substrate ( 310 ) tilted in the first direction. The method further includes tilting the substrate ( 310 ) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate ( 310 ) tilted in the second opposite direction.

Description

technical field [0001] [0001] The present invention relates generally to methods of doping semiconductor substrates; and, more particularly, to a method of implanting dopants by varying the tilt angle of the substrate relative to an implant source. Background technique [0002] [0002] Implantation of dopants in integrated circuit fabrication requires precise control of beam incidence angle. Although there are many different types of beam incidence angle errors, three of the more common types are cone angle errors, beam deflection errors, and parallelism errors across the entire wafer. Cone angle errors are usually the result of cone angle effects caused by the geometry of the wafer scanning system. Taper angle error can vary across the entire wafer. For example, the beam angle error is approximately -x degrees at one wafer edge, approximately zero degrees at the wafer center, and approximately +x degrees at the opposite edge. On the other hand, deflection errors are intro...

Claims

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Application Information

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IPC IPC(8): H01L21/265H01L21/425
CPCH01L21/26586H01L21/823814H01J2237/31701Y10S438/914
Inventor S·格尼姆J·D·伯恩斯坦L·S·罗伯特松J·许J·洛伊克
Owner TEXAS INSTR INC