Method for manufacturing layer structure

Abstract

Laminar structure production produces a structure with a smoothed intermediate layer and another layer lying on top of it. The intermediate layer is treated with a gaseous etching agent containing hydrogen fluoride. Some material is thereby eroded, causing the intermediate layer to be made smooth.

Description

Technical field [0001] The present invention relates to a method of manufacturing a layer structure including a smoothed intermediate layer and a cover layer applied on the intermediate layer. Such layer structures are manufactured, for example, as substrates for electronic, optoelectronic and micro-electromechanical applications. For example, the layer is deposited on the carrier by the CVD method, or the layer is connected with the substrate by the bonding method. Representatives of these substrates are, for example, semiconductor wafers that include more deposited layers or connecting layers, especially SOI substrates (silicon on insulator), including Si x Ge 1-x (Silicon-germanium) layer and substrate of strained silicon (strained silicon on bulk) and sSOI substrate (strained silicon on insulator). Background technique [0002] Applying the cover layer to the intermediate layer is a critical step, because usually this step must require the lowest possible micro-roughness of t...

AI Technical Summary

Problems solved by technology

The disadvantage of these methods is the expense they require