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Method for forming fine pattern of semiconductor device

A semiconductor and patterning technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, instruments, etc., can solve problems such as difficulty in forming fine patterns of semiconductor devices

Inactive Publication Date: 2007-11-14
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, since the resolution of exposure using a short-wavelength light source is limited to 0.1 μm, it is difficult to form the fine patterns required for highly integrated semiconductor devices

Method used

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  • Method for forming fine pattern of semiconductor device
  • Method for forming fine pattern of semiconductor device
  • Method for forming fine pattern of semiconductor device

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Embodiment Construction

[0007] One method for forming fine patterns of semiconductor devices uses a double etching process. This method is useful for ensuring overlapping and arranging margins. Thus, the disclosed method reduces manufacturing costs and reduces processing time. A method for forming a fine pattern of a semiconductor device will be described in detail below with reference to the accompanying drawings, and is not intended to limit the claimed invention.

[0008] 1a to 1h are cross-sectional views illustrating a method for forming a fine pattern of a semiconductor device according to an embodiment of the present invention.

[0009] FIG. 1 a shows a first bottom layer 103 and a second bottom layer 105 sequentially formed on a semiconductor substrate 101 . The first bottom layer 103 and the second bottom layer 105 are formed of materials suitable for use as word lines, bit lines or metal lines. Hard mask patterns 107 are formed on the second underlayer 105 at the smallest interval obtain...

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Abstract

A method for forming fine patterns of a semiconductor device includes forming hard mask patterns over an underlying layer. A first organic film is formed over the hard mask patterns. A second organic film is formed over the first organic film. The second organic film is planarized until the first organic film is exposed. An etch-back process is performed on the first organic film until the underlying layer is exposed. The first organic film and the second organic film are etched to form organic mask patterns including the first organic film and the second organic film. Each organic mask pattern is formed between adjacent hard mask patterns. The underlying layer is etched using the hard mask patterns and the organic mask patterns as an etching mask to form an underlying layer pattern.

Description

technical field [0001] The present invention generally relates to a method for forming fine patterns of semiconductor devices. Background technique [0002] As demands for small semiconductor devices increase, patterns are formed more closely on semiconductor substrates. Resists and exposers have been developed to obtain fine patterns on semiconductor substrates. [0003] In photolithography, the exposure process uses KrF (248nm) or ArF (193nm) as a light source. Conventional exposure procedures use short-wavelength light sources such as F 2 (157nm) or EUV (13nm), etc. However, when a new light source is applied, an additional exposure process is required. As a result, manufacturing cost increases and focus depth width decreases. In addition, since the resolution of exposure using a short-wavelength light source is limited to 0.1 μm, it is difficult to form fine patterns required for highly integrated semiconductor devices. Contents of the invention [0004] A method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/3213H01L21/768H01L21/28H01L21/027G03F7/00
CPCG03F7/022H01L21/0271
Inventor 郑载昌
Owner SK HYNIX INC