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Cover glass for semiconductor package and method for producing same

A manufacturing method and package technology, applied in semiconductor/solid-state device manufacturing, glass manufacturing equipment, semiconductor devices, etc., can solve problems such as adverse effects, omissions, and precision damage to productivity of solid-state imaging devices, so as to prevent display Defective, malfunction suppression, less platinum pitting effect

Active Publication Date: 2007-11-14
NIPPON ELECTRIC GLASS CO LTD
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

In addition, since such a groove has a relatively wide and shallow shape, it may be missed in an image inspection process using an electronic device. When this type of cover glass is mounted on a solid-state imaging device, the displayed image black stripes in
In addition, cerium oxide used as a free abrasive contains Th as an impurity, and if the cerium oxide adhering to the cover glass cannot be completely removed after grinding, it may also become a source of α rays.
[0012] As mentioned above, the precise polishing that impairs productivity and the adverse effect on the characteristics of the solid-state imaging device due to the polishing will become unavoidable problems to some extent as long as the polishing is carried out.

Method used

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  • Cover glass for semiconductor package and method for producing same
  • Cover glass for semiconductor package and method for producing same

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Embodiment Construction

[0024] The light-transmitting surface of the cover glass for a semiconductor package of the present invention is a non-polished surface, and its surface roughness (Ra) is 1.0 nm or less. This kind of cover glass with high surface quality can be formed by down-draw method or float method. As the down-draw method, although the overflow down-draw method or the slit down-draw method is suitable, especially for the case of the overflow down-draw method, since the glass surface is a free surface and does not come into contact with other members, by controlling the melting conditions or forming conditions, it is possible to obtain It has a desired thickness (0.05-0.7 mm in the case of a cover glass for a semiconductor package) and is excellent in surface smoothness, and is therefore preferable. That is, when the overflow down-draw method is used, since the surface (light-transmitting surface) can not be ground to obtain a smooth surface, it is possible to produce a surface roughness ...

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Abstract

A cover glass for semiconductor packages (10) is a glass sheet comprising a first transparent face (10a) and a second transparent face (10b) which are opposite to each other in the thickness direction and a lateral surface (10c) constituting the sides of the glass sheet. The cover glass (10) has dimensions of 14 x 16 x 0.5 mm. The first transparent face (10a) and the second transparent face (10b) are unpolished surfaces, and respectively have a surface roughness (Ra) of not more than 0.5 nm.

Description

technical field [0001] The present invention relates to a cover glass for a semiconductor package mounted on the front surface of a semiconductor package housing a solid-state imaging device or a laser diode, protecting a solid-state imaging device or a laser diode, and used as a light transmission window, and a manufacturing method thereof. Background technique [0002] On the front surface of the solid-state imaging device, in order to protect the semiconductor element, a cover glass having a flat light-transmitting surface is arranged. The cover glass is sealed and bonded to a package made of ceramic materials such as alumina or metal materials or resin materials by using adhesive materials made of various organic resins or low-melting glass to protect the components contained in the package. It is an internal solid-state imaging device and functions as a light transmission window for visible light and the like. [0003] As a solid-state imaging device, a CCD (Charge Cou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L23/04H01L31/0203H01L33/00H01L21/48H01S5/022C03B15/00C03B18/00C03C3/093
Inventor 伊藤伸敏淀川正弘三和晋吉桥本幸市二上勉
Owner NIPPON ELECTRIC GLASS CO LTD
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