Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for fabricating semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, microstructure devices, manufacturing microstructure devices, etc., can solve problems such as damage and achieve the effect of inhibiting damage

Active Publication Date: 2007-12-12
TDK CORPARATION
View PDF0 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, there are fragile parts in the structure formed on the semiconductor wafer, which are easily damaged by the pressure of water

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for fabricating semiconductor device
  • Method for fabricating semiconductor device
  • Method for fabricating semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0065] Hereinafter, a method of manufacturing a semiconductor device according to a first embodiment of the present invention will be described with reference to the drawings.

[0066] FIG. 2( a ) to FIG. 2( e ) show the manufacturing method of the MEMS microphone chip 100 of this embodiment.

[0067] First, as shown in FIG. 2( a ), a laminated material film 103 a for processing into the vibrating membrane 103 is formed on one surface (hereinafter referred to as the surface) of the semiconductor wafer 101 . The laminated material film 103a can be formed by, for example, laminating a silicon nitride (SiN) film, a polysilicon (PS: Poly Silicon) film, a tetraethylorthosilicate (TEOS: Tetraetylorthosilicate) film, and a SiN film sequentially from bottom to top. Structure.

[0068] Next, what is formed to cover the laminated material film 103a and has a pattern corresponding to the processed shape of the vibrating film 103 is, for example, silicon dioxide (SiO 2 ) film etch stop ...

no. 2 example

[0093] Next, a method of manufacturing a semiconductor device according to a second embodiment of the present invention will be described with reference to the drawings. In this embodiment, the MEMS microphone chip 100 shown in FIG. 1 is also taken as an example for illustration. In addition, since it is the same as the first embodiment except for the process of removing the sacrificial layer 113 and the process of forming the chip, the process of forming the chip in this embodiment will be mainly described here. In addition, FIGS. 4( a ) to 4 ( c ), and FIGS. 5( a ) and 5 ( b ) are diagrams illustrating the manufacturing process of the semiconductor device in this embodiment.

[0094] Specifically, first, the steps of Fig. 2(a) to Fig. 2(d) are performed in the same manner as in the first embodiment. By this method, a semiconductor wafer 101 having a plurality of individual chip structures can be obtained, as shown in FIG. 2( d ).

[0095] Next, as shown in FIG. 4( a ), the...

no. 3 example

[0118] Next, a method of manufacturing a semiconductor device according to a third embodiment of the present invention will be described with reference to the drawings. In this embodiment, the MEMS microphone chip 100 shown in FIG. 1 is also taken as an example for illustration. In addition, since it is the same as the first embodiment except for the process of removing the sacrificial layer 113 and the process of forming the chip, the process of forming the chip in this embodiment will be mainly described. In addition, FIGS. 7( a ) to 7 ( c ) and FIGS. 8( a ) and 8 ( b ) are diagrams illustrating a method of manufacturing a semiconductor device according to this embodiment.

[0119] Specifically, first, the steps of Fig. 2(a) to Fig. 2(d) are performed in the same manner as in the first embodiment. In this way, as shown in FIG. 2( d ), it is possible to obtain a semiconductor wafer 101 having a structure in which a plurality of fixed films 104 are formed on the vibrating fil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer 101 to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, in particular to a method of dicing. Background technique [0002] Generally, when manufacturing a semiconductor device, after forming a plurality of chips including various elements such as transistors on a wafer, dicing is performed to separate the chips into pieces. When dicing is performed in this way, the wafer or the device may be damaged, which may cause a decrease in the manufacturing yield of the semiconductor device. For example, when blade dicing is performed, chipping (chipping) may occur at the edge of the chip. When these fragments reach regions in the semiconductor device where various elements such as transistors are formed, they damage the performance of the semiconductor device. [0003] Therefore, techniques for avoiding damage to semiconductor devices during such dicing have been studied until now. [0004] As an example, the method of cutting a se...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/782B81C1/00H04R31/00
Inventor 内海胜喜隈川隆博松浦正美松岛芳宏
Owner TDK CORPARATION
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com