Method for manufacturing capacity element, method for manufacturing semiconductor device and semiconductor-manufacturing apparatus
A manufacturing method and a technology of capacitive elements, which are applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve problems such as the difficulty in obtaining the electrical characteristics of capacitive elements, imprinting characteristics, maintaining characteristic reproducibility, and unstable electrical characteristics.
Inactive Publication Date: 2008-01-30
TOKYO ELECTRON LTD
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Problems solved by technology
However, in the methods of the above-mentioned Patent Documents 1, 2, 3, and 5, the IrO is not controlled at all. 2 Therefore, it may be difficult to obtain the reproducibility of the electrical characteristics (fatigue characteristics, imprinting characteristics, retention characteristics) of the capacitor element, and make these electrical characteristics unstable
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[0058] Hereinafter, the manufacturing process of a dielectric material layer and the operation|movement of the semiconductor manufacturing apparatus in this process are demonstrated. In this device 100 , by executing an operation program in the control unit 100X shown in FIG. 3 , the entire device can be automatically operated. For example, an operating program is stored in the internal memory of the MPU in advance, and the operating program is read from the internal memory and executed by the CPU. In addition, the operation program is preferably configured to have various operation parameters, and the above-mentioned operation parameters can be appropriately set by an input operation from the operation unit 100P.
[0059] FIG. 5 is a time chart showing operation timings of each part of the semiconductor manufacturing apparatus 100 . Fig. 5(a) shows the flow rate of the solvent supplied through the supply line 110X. The solvent flow is controlled by a flow controller Xc.
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Abstract
A method of manufacturing a capacity element, including the steps of (a) forming an insulating film on a substrate to be processed, (b) forming a lower electrode layer on the insulating film, (c) feeding a vaporized organic solvent onto the lower electrode layer under a condition wherein an oxidizing gas is prevented from feeding in a first step (c1), and feeding one or plural kinds of the organometallic material gas together with the oxidizing gas to the lower electrode layer in a second step (c2), the first step (c1) and the second step (c2) being continuously performed in a chamber, thereby forming a dielectric layer on the lower electrode, and (d) forming an upper electrode layer on the dielectric layer.
Description
technical field [0001] The present invention relates to a method for manufacturing a capacitive element, a method for manufacturing a semiconductor device, and a semiconductor manufacturing device, and particularly to a manufacturing technique and a manufacturing device suitable for manufacturing a capacitive element having a dielectric made of metal oxide. Background technique [0002] Conventionally, a semiconductor device has a capacitive element formed by forming a dielectric layer on a lower electrode and forming an upper electrode on the dielectric layer. The dielectric layer of such a capacitor element is generally required to have a small leakage current and a high dielectric constant in order to ensure element characteristics. In particular, with the high integration of semiconductor devices in recent years, capacitive elements with small leakage current, small size, and large capacitance are required. As a dielectric layer meeting these requirements, the (Ba,Sr)Ti...
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IPC IPC(8): H01L21/822H01L21/316H01L21/8246H01L27/04H01L27/105H10B12/00H10B20/00
CPCC23C16/52C23C28/345C23C28/00H01L27/1052C23C28/322H01L28/55C23C28/3455H01L27/11507C23C16/45523C23C28/34H01L27/11502H01L21/31691H01L21/8239C23C16/409H01L21/02197H01L21/02271H10B53/30H10B53/00H10B99/00
Inventor 松本贤治
Owner TOKYO ELECTRON LTD