Plasma etching system

Abstract

A plasma etching system includes a closed plasma chamber, inside the chamber, compound gas is filled, the two sides inside the chamber are respectively provided with a first electric supply terminal and a second electric supply terminal which are respectively connected with a first plate electrode as well as a a second plate electrode, the plasma chamber is arranged with a grounded electric conduction sieve plate parallelly between the two plate electrodes, a pedestal for putting a substrate waited to be etched is arranged inside the plasma chamber, when the two electric supply terminals supply different voltages to the two plate electrodes respectively, and the two plate electrodes are enabled to discharge to the compound gas to dissociate into plasma gas molecules which perform irregular impact inside the plasma chamber, through the leading of the electric conduction sieve plate, the gas molecules penetrate a plurality of sieve holes arranged on the electric conduction sieve plate, the gas molecules can impact consistently to a film on the surface of the substrate, so as to perform plasma etching treatment to the surface of the substrate, through controlling the common distance between the electric conduction sieve plate and the substrate, the plasma gas molecules are enabled to more evenly impact the surface of the substrate, so as to form more evenly etching effect of the surface of the substrate.

Description

technical field [0001] The present invention relates to a plasma etching system. A grounded conductive sieve is installed in parallel between a first electrode plate and a second electrode plate in a closed plasma chamber. The conductive sieve can guide The plasma gas molecules generated after the discharge of the first electrode plate and the second electrode plate collide with the surface of a substrate uniformly, and the surface of the substrate is subjected to plasma etching treatment to solve the problem of the plasma gas molecules The disadvantage of uneven etching of large-sized substrates. Background technique [0002] Nowadays, our life is entering an information age where the electronic industry is booming. Various multimedia electronic products are being introduced rapidly, which has indeed brought more choices for human entertainment and leisure development. However, with the current various electronic technologies The screens and display devices of related elec...

AI Technical Summary

Problems solved by technology

[0003] Generally speaking, the size of an LCD flat panel display (FPD) is usually 1,000-1,200 mm x 1,200-1,500 mm, and in the near future, the glass substrate in the LCD flat panel display is more likely to exceed each The range of 2,500 millimeters on each side, due to the manufacturing technology of the LCD flat panel display, please refer to Fig. 1, one of the steps is to use a plasma gas 400 between the two electrodes 100, 200 to the surface of a glass substrate 300 A thin film (such as Silicon Nitride, referred to as SiN or amorphous silicon, referred to as a-Si) is processed by plasma etching, but during the plasma etching process, the manufacturer produces considerable Many bottlenecks and limitations, the reason is that the plasma gas 400 is in the large-sized glass substrate 300, because the plasma gas 400 has a wide range of etching work for the large-scale glass substrate 300, the plasma gas 400 The degree of bombardment of the molecules of the large glass substrate 300 in the middle and its two ends cannot be consistent, and the plasma gas 400 cannot uniformly etch the large glass substrate 300; in other words, please refer to FIG. 2, when the plasma gas 400 is between two electrodes 100 and 200 of different voltages (or frequencies), the impedance generated by the concentration in the center is greater than the impedance generated by the two ends. Therefore, the plasma gas The molecules in 400 cannot maintain a certain concentration between the two electrodes 100 and 200, and the plasma etching effect of the molecules of the plasma gas 400 on any position on the surface of the glass substrate 300 is also inconsistent. The time for performing plasma etching treatment on the glass substrate 300 is used to enhance the effect of plasma etching on the glass substrate 300 in the part of the weaker concentration of the plasma gas 400 , and the original concentration of the plasma gas 400 is higher. The part of the glass substrate 300 will be corroded instead and destroy the original etching plan on the glass substrate 300

[0004] Therefore, at present, the manufacturing technology of large-scale glass substrates for LCD flat-panel displays has faced a major challenge. The general traditional solution is to use the principle that the gap (Gap) is proportional to the impedance (Impedance). Please refer to Figure 3, and a The distance between the electrode 100 and the two ends of the glass substrate 300 is shortened or the distance between the electrode 100 and the center of the glass substrate 300 is increased, so that the impedance generated by the concentration of the plasma gas 400 in the center between the two electrodes 100 and 200 can be reduced as much as possible. Close to the impedance generated by the plasma gas 400 at both ends of the two electrodes 100, 200, in order to achieve the consistency of the etching efficiency of the plasma gas 400 to the glass substrate 300, however, in this way, the electrode 100 must first be Bending work is performed so that the center and both ends of the electrode 100 form unequal distances from the glass substrate 300, but the curvature required to bend the electrode 100 cannot be ideally realized.

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