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Method and device for producing oriented solidified blocks made of semi-conductor material

A technology of directional solidification block and directional solidification, which is used in semiconductor/solid-state device manufacturing, self-solidification method, polycrystalline material growth, etc., and can solve problems such as resistance change and aging.

Inactive Publication Date: 2008-02-27
REC SCANWAFER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the disadvantage is that the heating element is directly in the vapor flow of the semiconducting material which remains liquid during solidification and thus reacts with the semiconducting material such as silicon
In the case of graphite heating elements commonly used according to the prior art, this leads to rapid aging and also to a change in electrical resistance with corresponding consequences

Method used

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  • Method and device for producing oriented solidified blocks made of semi-conductor material

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Embodiment Construction

[0022] The apparatus shown in the drawing is used for the production of directionally solidified masses, in particular of silicon melts, from semiconductor materials. The device has a crucible 1 which is surrounded from above and on the sides by an external insulation 2 . This external insulation 2 is spaced from the side walls and top of the crucible 1 .

[0023] The crucible 1 and the outer insulation 2 are arranged in a vacuum chamber 3 and are held there by means of a support beam 4 which will be described in more detail below.

[0024] A partition 5 is inserted above the crucible 1 , which divides the space above the crucible 1 into a process chamber 6 and an upper heating chamber 7 . An active heating element 8 is arranged horizontally in the upper heating chamber 7 between the partition plate 5 and the upper cover of the heat insulator 2 . Furthermore, the partitions 5 rest on and are supported on an intermediate heat insulator 10 forming a frame, which is situated at...

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Abstract

The invention relates to a method for producing oriented solidified blocks made of semi-conductor material, in addition to a device. Said device comprises a crucible, wherein melt is received, and has an insulation which surrounds the crucible at least from the top and from the side and which is arranged at a distance therefrom at least above the crucible, and at least one heating device which is arranged above said crucible. The region inside the insulation above the crucible is divided by an intermediate cover in a process chamber and a heating chamber is arranged there above, wherein at least one heating element is arranged.

Description

technical field [0001] The invention relates to a method for producing a directionally solidified mass from semiconductor material, in which a melt contained in a crucible is heated at least from above in a process chamber for directionally solidifying, taking advantage of crystallization . [0002] Furthermore, the invention relates to a device for producing a directionally solidified mass from semiconducting material, which has a crucible containing a melt therein and an insulating body surrounding the crucible at least from above and on the sides, the insulating body being at least on the sides of the crucible. At a distance from the upper part, there is also at least one heating device arranged above the crucible. Background technique [0003] In methods and devices according to the prior art for producing directionally solidified blocks of semiconductor materials, in particular directionally solidified silicon, the melt contained in the crucible is heated either from t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/06
CPCC30B11/00C30B29/06C30B11/003Y10T117/1092Y10T117/1016Y10T117/1024Y10T117/10Y10T117/1004Y10T117/1008H01L21/02H01L21/324
Inventor 弗朗茨·雨果
Owner REC SCANWAFER